半導體元件可靠度及其失效物理
Reliability and Failure Physics of Semiconductor Devices
| 節 | 週一 | 週四 |
|---|---|---|
5 13:20–14:10 | 半導體元件可靠度及其失效物理 EE116 2 節連堂 | |
6 14:20–15:10 | ||
8 16:30–17:20 | 半導體元件可靠度及其失效物理 EE116 |
* 根據陽明交大上課時間表所列
This course focuses on the Reliability and Failure Physics of Semiconductor Devices. Reliability is a key issue for semiconductor devices. Therefore, it is necessary for future engineers to understand the reliability issues, characterization methods and failure physics. Furthermore, four important main reliability challenges (Bias temperature instability & interface traps / Time dependent dielectric breakdown / Mass transport-induced failures / ESD) are selected to be focused in this class. Furthermore, not only for the professional knowledge but also the communication and presentation skills are crucial for being a successful engineer. Therefore, in order to help the students to understand this course and to improve his/her communication & presentation skills, this course provides an opportunity to have an oral presentation with an oral discussion.
No requirement
An oral presentation based on a selected topic: 40% Final open-book written exam with an oral discussion: 30% Homework: 15% Attendance: 15% Ps. The oral presentation and oral discussion in the final exam can be delivered by either English or Chinese. However, the students are highly encouraged to use English.
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction/An Overview of Electronic Devices and Their Reliability |
| 第 2 週 | An Overview of Electronic Devices and Their Reliability |
| 第 3 週 | Electronic Devices: How They Operate and Are Fabricated |
| 第 4 週 | Electronic Devices: How They Operate and Are Fabricated |
| 第 5 週 | Defects, Contaminants, and Yield |
| 第 6 週 | The Mathematics of Failure and Reliability |
| 第 7 週 | The Mathematics of Failure and Reliability |
| 第 8 週 | Bias temperature instability & interface traps |
| 第 9 週 | Bias temperature instability & interface traps/ Time dependent dielectric breakdown |
| 第 10 週 | Time dependent dielectric breakdown |
| 第 11 週 | Mass transport-induced failures |
| 第 12 週 | Mass transport-induced failures/ESD |
| 第 13 週 | ESD |
| 第 14 週 | Oral presentation preparation |
| 第 15 週 | Oral presentation preparation |
| 第 16 週 | Oral presentation |
| 第 17 週 | Recent reliability challenges in advanced CMOS technologies |
| 第 18 週 | Final exam |
M. Ohring, Reliability and Failure of Electronic Materials and Devices, 2nd Edition, 2014.