複合物半導體元件與製程

To familiarize students with the knowledge of compound semiconductor related materials, device and process technologies Contents: 1. Introduction of III-Vmaterials 2. GaAs material characteristics 3. GaAs material growth techniques 4. Bandgap engineering. 5. Epitaxy growth techniques: LPE, HVPE, MOCVD, MBE, 6. Physics of compound semiconductor devices:including FET, MESFET, HEMT and HBT 7. Fabrication process technologies for compound semiconductor devices. Including: Ion implantation, Lithography, Wet and Dry etch, Passivation, Isolation, PECVD , Metallization, Plating, Process control monitoring technology 8. InP technology 9. GaN material & devices

Electronic Materials, Semiconductor Device and Physics or related courses

References: 1. "Modern GaAs processing Methods" Ralph E. Williams, 1990 2. "SiGe ,GaAs and Inp Hetrojunction Bipolar Transistos" Jiam S. Yuan, 1990

1. Midterm Exam 40% 2. Final Exam 40% 3. Home works 20%

Class Notes