高功率半導體元件物理與技術
Power Semiconductor Devices - Physics and Technology
學期
107-1
學分
3
學分
當期課號
5025
永久課號
IEE5674
開課單位
電子研究所
授課教師
崔秉鉞
校區
光復
類別
選修
上課時間表
| 節 | 週二 | 週五 |
|---|---|---|
2 09:00–09:50 | 高功率半導體元件物理與技術 ED101 | |
7 15:30–16:20 | 高功率半導體元件物理與技術 ED101 2 節連堂 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
概述
介紹高功率半導體元件(600 V/10 A以上)的工作原理、元件結構、製程技術,讓已有半導體元件物理基礎的學生,進一步了解半導體元件在高功率場域的應用。
先修科目
半導體元件物理或類似內容之課程至少一學期。 積體電路技術或類似內容之課程至少一學期。
教學方式
投影片講解
評分方式
作業20%、期中考40%、期末考40%
週次計畫
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction-Historical perspective, Applications, and Industry trends |
| 第 2 週 | Basic Semiconductor Physics and Devices-Semiconductor properties, Schottky diode, p-n diode, JFET, BJT, Thyristor, MOSFET, etc. |
| 第 3 週 | Basic Semiconductor Physics and Devices-Semiconductor properties, Schottky diode, p-n diode, JFET, BJT, Thyristor, MOSFET, etc. |
| 第 4 週 | Breakdown Voltage- Avalanche breakdown, edge termination, RESURF, Super junction, etc. |
| 第 5 週 | Breakdown Voltage- Avalanche breakdown, edge termination, RESURF, Super junction, etc. |
| 第 6 週 | Power Rectifier- Schottky barrier diode (SBD), P-i-N diode, Junction barrier Schottky (JBS) diode, etc. |
| 第 7 週 | Power Bipolar Junction Transistors- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 8 週 | Power Bipolar Junction Transistors- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 9 週 | Mid-term Examination |
| 第 10 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 11 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 12 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 13 週 | Insulated Gate Bipolar Transistor (IGBT)- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 14 週 | Insulated Gate Bipolar Transistor (IGBT)- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 15 週 | SiC Process Technologies- Oxidation, Doping, Etching, Ohmic contact, etc. |
| 第 16 週 | SiC Process Technologies- Oxidation, Doping, Etching, Ohmic contact, etc. |
| 第 17 週 | SiC Process Technologies- Oxidation, Doping, Etching, Ohmic contact, etc. |
| 第 18 週 | Final examination |
教科書
Semiconductor Power Devices - Physics, Characteristics, Reliability, 2ed. by J. Lutz, H. Schlangenotto, U. Scheuermann, and R. De Doncker. Springer, 2018.
Office Hours
- 地點
- 另行約定。
- 時間
- 另行約定。
- 聯絡方式
- E-mail: bytsui@mail.nctu.edu.tw Tel: 03-5131570