功率半導體:元件設計、物理特性及可靠度
Power semiconductor devices: Device design, Characteristics, and Reliability
| 節 | 週四 |
|---|---|
5 13:20–14:10 | 功率半導體:元件設計、物理特性及可靠度 EE116 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Power semiconductor devices are at the heart of the green innovation to enable a high efficient modern power electronics. This course focuses on power semiconductor devices from basic physical models, transport properties, the understanding of different device concepts, e.g. power diodes, power MOSFETs, BJT, thyristors, and IGBT. In addition, advanced power devices with wide bandgap materials, i.e. GaN and SiC, and the reliability issues will be discussed. Furthermore, not only for the professional knowledge but also the communication and presentation skills are crucial for being a successful engineer. Therefore, in order to help the students to understand this course and to improve his/her communication & presentation skills, this course provides an opportunity to have an oral presentation and a final exam with an oral discussion.
Graduate students who are following Semiconductor Device Physics (I) in the same semester or have followed Semiconductor Device Physics (I) before .
An oral presentation based on a selected topic: 35% Final open-book written exam: 35% Homework: 15% Attendance: 15%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction |
| 第 2 週 | Holiday |
| 第 3 週 | Semiconductor Fundamentals |
| 第 4 週 | Breakdown Voltage |
| 第 5 週 | Breakdown Voltage |
| 第 6 週 | Power Diodes |
| 第 7 週 | Holiday |
| 第 8 週 | Power Diodes |
| 第 9 週 | Power MOSFETs |
| 第 10 週 | Power MOSFETs |
| 第 11 週 | Bipolar Transistors and Thyristors |
| 第 12 週 | Bipolar Transistors and Thyristors |
| 第 13 週 | Insulated Gate Bipolar Transistors (IGBTs) |
| 第 14 週 | Insulated Gate Bipolar Transistors (IGBTs) |
| 第 15 週 | Oral presentation preparation |
| 第 16 週 | Oral presentation |
| 第 17 週 | Oral presentation/WBG power semiconductor devices & Reliability issues |
| 第 18 週 | Final exam |
The handouts prepared by the instructor.