奈米結構半導體的理論與模擬
Theory and Modeling of Semiconductor Nanostructures
| 節 | 週四 |
|---|---|
7 15:30–16:20 | 奈米結構半導體的理論與模擬 EE113 3 節連堂 |
8 16:30–17:20 | |
9 17:30–18:20 |
* 根據陽明交大上課時間表所列
At first, the solid-state quantum properties and nanoscale technology of various semiconductor-based electronic devices are reviewed. Next, special emphasis is made on the properties of various types of nanostructures (interface physics, ultrathin gate stacks, ultrathin SOI/FIN, nano-dot, nano-scaled local irregularities, and so forth) which are seen in advanced electron devices. The class also covers the device characterization and reliability related topics of today’s commercial electron devices such as advanced FETs and Non-Volatile Memory devices (NVMs), because local irregularities in nanostructures gives rise to such engineering problems. This part is based on the instructor’s actual experience in the advanced industry (Toshiba’ headquarter R&D). At last, the future applications of nano-engineering is also discussed with some topics related to nanoelectronics and a couple of sensors for the bioelectronics, IoT, Quantum Computing, etc.
A good knowledge of the following subject is required in order to do well in the course. -introductory device physics (device physics module) -introductory quantum mechanics and statistical mechanics
Evaluation and Grading Policy: Process for finding an answer will be carefully checked. Poor description in answers will be negatively evaluated. Pedagogy and other supplementary information (websites, TAs, handouts and/or databases): See e-Campus.
Homework and Assignments: 50% Exams and Quizzes: 50%
- Reviews of Device physics
- Approach to nanostructures
- Practical relation to advanced engineering and some applications (incl. Bioelectronics, Seonsors, Quantum Computers, etc)
| 週次 | 主題 |
|---|---|
| 第 1 週 | Guidance: Trend and beyond (Nanoelectronics) |
| 第 2 週 | Prologue: Quantum mechanics & Semiconductor Physics |
| 第 3 週 | REv. Device Physics (Junctions, FETs, Transport phenomena, etc.) |
| 第 6 週 | Modeling and Characteristics of thin materials such as gate dielectrics, SOI/FIN etc. (Conventional and Advanced) |
| 第 9 週 | Midterm |
| 第 10 週 | On advanced modeling and characteristics of electron devices |
| 第 13 週 | Advanced modeling and characteristics of semiconductor nanostructures |
| 第 16 週 | Nanostructures: Local Irregularities and future applications Jan. 2 is a spare. |
No Text Book. Recommended References: ‧ Physics and Technology of Semiconductor Devices by A. Grove ‧ The Feynman Lectures on Physics, Feynman, Leighton, & Sans . Solid State Physics, Gerald Burns . Complete Guide to Semiconductor Devices, K. K. Ng . Quantum Wells, Wires and Dots, Paul Harrison . Quantum Mechanics and Path Integrals, Feynman & Hibbs . Statistical Mechanics, R. P. Feynman . Statistical Mechanics: An Advanced Course with Problems and Solutions (North-Holland Personal Library) by Kubo. Ryogo . Introduction to Solid State Physics, C. Kittel . Solid State Physics, Ashcroft & Mermin
- 地點
- MISRC814 (電子與資訊研究中心 Room 814)
- 時間
- 15:00 – 18:00
- 聯絡方式
- By e-mail: hwhpnabe@mail.nctu.edu.tw