半導體元件可靠度及其失效物理
Reliability and Failure Physics of Semiconductor Devices
| 節 | 週三 |
|---|---|
2 09:00–09:50 | 半導體元件可靠度及其失效物理 A304 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
"Reliability is, after all, engineering in its most practical form" said by J. R. Schlesinger - Former US Secretary of State for Defense. Reliability is an essential part of a successful semiconductor product because it is related to trust. No reliability is equal to no business. Especially, the new technologies based on the advanced designs and novel materials, e.g., FinFETs, high k dielectrics, wide bandgap, Ferroelectric, or 2D materials, cannot be commercialized without the proven reliability. Therefore, a good R&D engineer should recognize the statistical tools/characterization methods, identify the reliability issues,and evaluate failure physics, further designing for reliability. In this course, the basic semiconductor devices/processes, statistical tools, and characterization methods for reliability evaluation are covered. Furthermore, four most important main reliability challenges (Bias temperature instability & interface traps / Time dependent dielectric breakdown / Mass transport-induced failures / Electrostatic discharge (ESD)) will be addressed in this class. Intended Learning Outcomes (ILOs): By the end of this class, you should be able to: 1. Explain the basic operation principles and fabrication processes for the MOS type semiconductor technologies 2. Apply the basic statistics/statistical tools for reliability analysis 3. Evaluate the failure physics of reliability issues (Bias temperature instability (BTI) & interface traps / Time dependent dielectric breakdown (TDDB) / Mass transport-induced failures / Electrostatic discharge (ESD)) 4. Present the reliability issues using your own word 5. Design for reliability (DFR)
No requirement
An oral presentation based on a selected topic: 35% Final open-book written exam : 35% Homework: 15% Attendance: 15%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction/An Overview of Electronic Devices and Their Reliability |
| 第 2 週 | An Overview of Electronic Devices and Their Reliability |
| 第 3 週 | Electronic Devices: How They Operate and Are Fabricated |
| 第 4 週 | Electronic Devices: How They Operate and Are Fabricated |
| 第 5 週 | Defects, Contaminants, and Yield |
| 第 6 週 | The Mathematics of Failure and Reliability |
| 第 7 週 | The Mathematics of Failure and Reliability |
| 第 8 週 | Bias temperature instability & interface traps |
| 第 9 週 | Bias temperature instability & interface traps |
| 第 10 週 | Time dependent dielectric breakdown |
| 第 11 週 | Time dependent dielectric breakdown |
| 第 12 週 | Mass transport-induced failures |
| 第 13 週 | Holiday |
| 第 14 週 | ESD |
| 第 15 週 | ESD |
| 第 16 週 | Oral presentation preparation |
| 第 17 週 | Holiday |
| 第 18 週 | Final exam |
1. M. Ohring, Reliability and Failure of Electronic Materials and Devices, 2nd Edition, 2014. 2. Literature in reliability issues
- 地點
- MIRC601
- 時間
- By appointment
- 聯絡方式
- tlwu@nctu.edu.tw