半導體材料與元件特性分析
Semiconductor Material and Device Characterization
| 節 | 週四 |
|---|---|
5 13:20–14:10 | 半導體材料與元件特性分析 EE231 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
This course covers the fundamental semiconductor material and device characteristics as well as the commonly used characterization techniques in semiconductor research and industry. Electrical characterization is the main focus since the performance of devices can be directly measured or interpreted. Material characterization techniques, including electron beam, X-ray, ion beam, and optical methods, that are usually employed for in-line monitor, process development or failure analysis are also emphasized. The object of the course is to prepare students with the knowledge linking semiconductor materials and device characteristics with measurement techniques for them to pursue advanced graduated research or careers in industry.
Semiconductor Physics and Devices Preferred
Homework 40% Mid-term 30% Final Exam 30%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction |
| 第 2 週 | Basics of Semiconductor Physics |
| 第 3 週 | Review of Semiconductor Devices |
| 第 4 週 | 1. Resistance and Capacitance Measurements; 2. Doping and Mobility of Semiconductor Materials |
| 第 6 週 | Junctions (PN, Metal-semiconductor) |
| 第 7 週 | MOSCAP, Gate Dielectrics, and Interface |
| 第 8 週 | Characterization of Electronic Defects |
| 第 9 週 | Mid-Term Exam |
| 第 10 週 | Characterization of Transistor-I |
| 第 11 週 | Characterization of Transistor-II |
| 第 12 週 | Electron Beam Techniques-I |
| 第 13 週 | Electron Beam Techniques-II |
| 第 14 週 | X-ray Analysis + Ion Beam Methods |
| 第 15 週 | Optical Methods |
| 第 16 週 | Surface Profile and Contamination |
| 第 17 週 | Summary |
| 第 18 週 | Final Exam |
1. Semiconductor Material and Device Characterization, 3/e Author: Dieter K. Schroder 2. Handout Materials from Instructor
- 時間
- By Appointment