超大型積體電路量產可行性設計
VLSI Design for Manufacturability
學期
108-2
學分
3
學分
當期課號
5030
永久課號
IEE5718
開課單位
電子研究所
授課教師
陳宏明
類別
選修
上課時間表
| 節 | 週一 |
|---|---|
5 13:20–14:10 | 超大型積體電路量產可行性設計 ED525 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
概述
本課程包含超大型積體電路量產可行性設計的基本概念與實際運用,尤其介紹先進製程所需考慮的製造變異與良率下降因素,以及如何在電路實體設計時考量各種因素,進一步有效分析、模擬及提升可靠度。
先修科目
Circuit and electronic background courses, VLSI Design
評分方式
Lab and HW: 40% Final Project: 30% Tests: Midterm 30%
課程大綱
- 1. Overview of key technologies and EDA methodologies for sub-90nm technologies 2. Variability mismatch sources and design for variability (DFV) 3. Silicon test and measurement for statistical process data 4. Yield degrading factor; DFM includes DFY, DFV, and design for reliability (DFR) 5. Statistical extraction and chip timing impact 6. Manufacturing simulations and analyses for lithography and shape 7. Manufacturing simulations and analyses for thickness and critical defecting area 8. Manufacturability-oriented EDA (placement, routing, and post-route optimization)
教科書
References: 1. B.P. Wong et.al., “Nano-CMOS Design for Manufacturability,” Wiley 2009 2. C. Chiang and J. Kawa, “Design for Manufacturability and Yield for Nano-Scale CMOS,” Springer 2007
Office Hours
- 地點
- ED 407
- 時間
- TBD
- 聯絡方式
- hmchen@mail.nctu.edu.tw