半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週一 |
|---|---|
3 10:10–11:00 | 半導體物理及元件(一) EE130 3 節連堂 |
4 11:10–12:00 | |
N 12:20–13:10 |
* 根據陽明交大上課時間表所列
Semiconductor technologies become the necessary to enable high performance electronic products. Recently, the demanding of the new applications, such as 5G, AI, cloud computing, and Electric vehicle, trigger the innovations of the semiconductor technologies. The core knowledge for the state-of-the-art semiconductor technologies is the Semiconductor Physics and Devices, which is essential for every researchers and engineers. In this class, the properties for the semiconductor materials, the physics of the carrier drift, and the operation principals for the most important devices architectures, i.e., Diode, BJT, MOSFET, and JFET, will be introduced and discussed in details. Furthermore, the recent progress and challenges in developing beyond Moore's law technologies will be reviewed. Intended Learning Outcomes (ILOs): By the end of this class, you should be able to: 1. Explain the basic materiel properties and device physics. 2. Apply the device physics to evaluate the operation principles of p-n diodes, MOSFETs, BJTs, and JFETs. 3. Evaluate the current issues in the scaling technologies (More Moore technologies), e.g., short channel effects, ultra-thin dielectric, subthreshold swing (SS), etc. -Identify the problems 4. Propose the designs to overcome the challenges in the scaling semiconductor technologies. -Innovation is about the problem-solving
1. Graduate students/ undergraduate students who have knowledge in basic physics. 2. Passion in semiconductor technologies
**This course is temporarily switched to online lecture from 2020/03/09. Mail Lecturer for the link. Powerpoint with some video/on-line lectures are used. Digital notes in the powerpoint are provided after each chapter. Field trip to TSMC Museum of Innovation is organized.
2 exams 75%, homework 15%, class participation 10%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction |
| 第 2 週 | The Crystal Structure of Solids |
| 第 3 週 | Introduction to Quantum Mechanics and Quantum Theory of Solids |
| 第 4 週 | The Semiconductor in Equilibrium & Carrier Transport |
| 第 5 週 | The Semiconductor in Equilibrium & Carrier Transport |
| 第 6 週 | Holiday/ |
| 第 7 週 | Nonequilibrium Excess Carriers in Semiconductors |
| 第 8 週 | Nonequilibrium Excess Carriers in Semiconductors |
| 第 9 週 | The pn Junction / Midterm |
| 第 10 週 | The pn Junction Diode |
| 第 11 週 | The Bipolar Transistor |
| 第 12 週 | The Bipolar Transistor |
| 第 13 週 | Metal–Oxide–Semiconductor Field-Effect Transistor |
| 第 14 週 | Metal–Oxide–Semiconductor Field-Effect Transistor |
| 第 15 週 | Metal–Semiconductor and Semiconductor Heterojunctions |
| 第 16 週 | Metal–Semiconductor and Semiconductor Heterojunctions |
| 第 17 週 | The Junction Field-Effect Transistor |
| 第 18 週 | Final exam |
1. D. Neamen, Semiconductor Physics And Devices, 4th edition (2012) 2. Lecture notes
- 地點
- Microelectronics and Information Research Center (MIRC) 601
- 時間
- 2pm -3pm on Monday or by appointment
- 聯絡方式
- Feel free to contact me : tlwu@nctu.edu.tw