電子元件與低頻雜訊
Electronic Devices and Low-frequency Noise
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 電子元件與低頻雜訊 EE116 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
The dimension of semiconductor devices is continuously shrinking for the purpose to extend Moore's law. The low frequency electrical noise becomes larger as the devices downsize, and will ultimately cause performance and reliability issues. A fundamental understanding of the microscopic mechanism responsible for the low frequency noise is essential for mitigating its magnitude. In this course, we will introduce the basic knowledge in semiconductor materials, devices, and their low-frequency noise. We will briefly review the quantum mechanics and apply these principles to the problem of electron motion. According to these discussions, we will introduce the concepts of band theory in solids. Then, we will discuss the electrical transport properties in semiconductor materials. After the introduction of basic concepts in semiconductor devices, we will introduce the noise process in metals and semiconductor devices, including understanding the dynamical objects responsible for the noise and the defects kinetics. This course also includes several experiments in which the students will learn the techniques to setup a precise and quiet measurement circuits. They will also learn how to measure and analyze the low frequency noise in devices. Objectives of this course: 1. Students will learn the brief concepts of semiconductor devices and the physics of low frequency noise. 2. Students will learn the practical techniques to setup a precise measurement circuit and the techniques to measure and analyze low frequency noise in devices.
Exams and Quizzes: 30% Homework: 30% Participation: 40%
| 週次 | 主題 |
|---|---|
| 第 1 週 | The wave mechanics of electrons (1/2): Particles. Waves. The Schrödinger equation. |
| 第 2 週 | The wave mechanics of electrons (2/2): Quantum wells. The particle in a box. Atomic Energy levels. |
| 第 3 週 | Semiconductors (1/2): Periodic potentials. The Bloch ́s theorem. The Kronig-Penney model. |
| 第 4 週 | Semiconductors (2/2): Nearest-neighbor coupling. Band structures. Effective mass of electrons. Alloys and heterostructures. |
| 第 5 週 | Electrical transport (1/2): Fermi-Dirac statistics. Intrinsic semiconductors. Extrinsic semiconductors. Electrical conductivity. |
| 第 6 週 | Electrical transport (2/2): Majority and minority carriers. Lifetimes, recombination, and the diffusion equation. The work function. |
| 第 7 週 | Introduction to low-frequency noise in metals (1/2). |
| 第 8 週 | Middle term exam. |
| 第 9 週 | Introduction to low-frequency noise in metals (2/2). |
| 第 10 週 | Introduction to low-frequency noise in semiconductor devices (1/2). |
| 第 11 週 | Introduction to low-frequency noise in semiconductor devices (2/2). |
| 第 12 週 | Experiment (1/4). |
| 第 13 週 | Experiment (2/4). |
| 第 14 週 | Experiment (3/4). |
| 第 15 週 | Experiment (4/4). |
| 第 16 週 | Final exam. |
Textbook: [1] D. K. Ferry and J. P. Bird, Electronic Materials and Devices (Academic Press, 2001). [2] T. Grasser (ed.), Noise in Nanoscale Semiconductor Devices (Springer Nature Switzerland AG., 2020) Reference: [1] C. Kittel, Introduction to Solid State Physics (8th edition, John Wiley & Sons, New York, 2005). [2] S. Kogan, Electronic Noise and Fluctuations in Solids (Cambridge Univ. Press, 1996). [3] E. Simoen and C. Claeys, Random Telegraph Signals in Semiconductor Devices (IOP Publishing, Bristol, UK, 2016)
- 地點
- TBD
- 時間
- TBD
- 聯絡方式
- email: sunshine@nctu.edu.tw