電子元件模擬及量子-ATK軟體操件

Simulation of Electronic Devices and Basics of Quantum ATK

學期

109-1

學分

3 學分

當期課號

5224

永久課號

CST5053

開課單位

國際半導體產業學院碩士班

授課教師

阿圖爾Artur、Useinov

校區

光復

類別

選修

上課時間表

節	週五
5 13:20–14:10	電子元件模擬及量子-ATK軟體操件 EE116 3 節連堂
6 14:20–15:10
7 15:30–16:20

* 根據陽明交大上課時間表所列

概述

The course corresponds to the physics simulation for macro- and nano-scale electronic devices, its resistive/conductive properties, bandstructures of the materials. The course includes different non-magnetic (e.g. ferroelectric) and magnetic (e.g. magnetic tunnel junctions) well as semiconductors electronic devices. The seminars and homework will include elements of a structure's modeling and programming using Wolfram Mathematica and Quantum ATK (Similar to TCAD from Synopsys) tools.

先修科目

To teach students to understand physics and programming of the nano-scale devices. The seminars and homework will include elements of a structure's modeling and programming using Wolfram Mathematica and Quantum ATK (Similar to TCAD from Synopsys) tools.

教學方式

Lectures and seminars for practice of programming. Remote access for server with Quantum ATK.

評分方式

1. Exams and Quizzes: 20% 2. Homework: 40% 3. Participation 40%. 4. Bonus 10% (personal activity)

週次計畫

週次	主題
第 1 週	Introduction: Quantum Mechanics, basics of Solid State physics.
第 2 週	Properties of the low dimensional systems. Important length scale. Characterization of materials and geometry for nano scale devices..
第 3 週	Electron transport in nano-scale devices: lecture and seminar; Simulation of electron transport (part 1).
第 4 週	Electron transport in nano-scale devices: lecture and seminar; Simulation of electron transport (part 2).
第 5 週	Spintronic devices. Non-volatile memory MRAM. Electron transport in magnetic tunnel junctions. (Lecture)
第 6 週	Spintronic devices. Electron transport in magnetic tunnel junctions. (Seminar-practice of programming). IC design for magnetic tunnel junctions (MTJs) in Cadence Virtuoso.
第 7 週	Basics for semiconductor ferroelectric devices. E-field control of the resistance. Programming in Wolfram Mathematica
第 8 週	Seminar: simulation of I-V curves of a complicated nano scale devices.
第 9 週	Middle term exam.
第 10 週	Introduction. Examples of Quantum ATK applications. Basic working principals.
第 11 週	An important aspects of the formalism in Q-ATK for simulating device systems using the non-equilibrium Greens function (NEGF) method.
第 12 週	The description of control windows in Quantum ATK. Practice: Builder, Scrip activations and Job run.
第 13 週	Density of state simulation. I-V curve simulation with/ without an external Gate. Model of transistor.
第 14 週	Homework review and practical seminar. Consideration of examples.
第 15 週	Spin transport in MTJs, Graphene-Nickel interface, Silicon p-n junction simulations.
第 16 週	Building a molecular point-like junction
第 17 週	Advanced device relaxation - manual workflow. Determination of low strain interfaces via geometric matching.
第 18 週	Homework review and Final Exam.

教科書

1) Victor E. Borisenko and Stefano Ossicini. What is What in the Nanoworld, A Handbook on Nanoscience and Nanotechnology (Wiley-VCH Verlag & Co. KGaA, 2012) ePDF ISBN: 978-3-527-64839-9 2) E. Tsymbal et.al. Handbook-of-Spin-Transport-and-Magnetism (2-d edition, 2019), https://doi.org/10.1201/9780429441189 3) online resources: https://quantumwise.com/documents/manuals/ATK-2016/ReferenceManual/index.html https://docs.quantumatk.com/tutorials/tutorials.html

Office Hours

地點: Office are 601 of MIRC bld.
時間: Mo-Tu:13.30-16.00
聯絡方式: email: artu@nctu.edu.tw