半導體元件物理
Semiconductor Device Physics
| 節 | 週一 | 週五 |
|---|---|---|
7 15:30–16:20 | 半導體元件物理 ED101 2 節連堂 | |
8 16:30–17:20 | 半導體元件物理 ED101 |
* 根據陽明交大上課時間表所列
提供學生為了解半導體元件動作原理及物理機制所需的基礎且完整的知識 (This course centers on developing a fundamental understanding of semiconductors and the many unique electronic and photonic devices that are built from semiconductors. A deeper discussion of semiconductor physics (based on introductory quantum mechanics), as well as semiconductor device operation, especially the nuances of design, performance tradeoffs, and other “real world” device issues, will be emphasized. Successful completion of this course should provide you with sufficient background for further study in microelectronics, nanoelectronics, nanophotonics and so on)
大學部電子學及物理 (Undergraduate-level Electronics and Physics)
Homework: 30% Midterm Exam 1: 25% Midterm Exam 2: 25% Final Exam: 20%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Basic Semiconductor Properties: 1. General Material Properties, 2. Nuances of crystal structure Elements of Quantum Mechanics: 1. Quantum Concept |
| 第 2 週 | Elements of Quantum Mechanics: 1. Quantum Concept 2. Basic Formulation 3. Some simple QM examples |
| 第 3 週 | Energy Band Theory 1. Preliminary considerations and Bloch theory 2. 1D analysis, 3. Kronig-Penny Model 4. Extrapolation to 3Ds |
| 第 4 週 | Energy Band Theory ( Extrapolation to 3Ds, Energy bands, band gap energy) Equilibrium Carrier Statistics 1. Density of state |
| 第 5 週 | Equilibrium Carrier Statistics 2. Carrier statistics- Fermi function, 3. nuances of doping, 4. Equilibrium concentration relationships, Concentration and EF calculations) |
| 第 6 週 | 4. Equilibrium concentration relationships, Concentration and EF calculations) Midterm exam I |
| 第 7 週 | Carrier Transport 1. Drift 2. Diffusion 3. Continuity equations |
| 第 8 週 | Recombination-Generation Processes 1. Recombination-Generation statistics 2. Surface Recombination-generation 3. R-G information |
| 第 9 週 | Metal-Semiconductor System 1. Ohmic Contact. 2. Schottky Contact. |
| 第 10 週 | PN Junctions 1. band diagrams 2. dc analysis 3. carrier tunneling |
| 第 11 週 | PN Junctions 4. Breakdown and ac analysis 2nd midterm |
| 第 12 週 | Bipolar Transistors dc I-V and Small-Signal Models Mid term II |
| 第 13 週 | MOS Capacitors 1. MOS diodes 2. Band diagram 3. dc C-V characteristics |
| 第 14 週 | MOS Capacitors ac C-V characteristics |
| 第 15 週 | MOSFET surface modulation I-V under gate and drain modulation |
| 第 16 週 | MOSFET important parameter |
| 第 17 週 | Final exam |
| 第 18 週 | Final report |
“Advanced Semiconductor Fundamentals” By Robert F. Pierret 1989 “Semiconductor Physics and Devices” By Donald A. Neamen
- 地點
- 工四館(ED617)
- 時間
- Mon. 17:30-19:00/Fri 17:30-19:00(please let me know you are coming) or by appointment or if my door is open, stop in and say hi!
- 聯絡方式
- If you need me and cannot find me- email me!