低維度電子元件專題

Selected Topics in Low-Dimensional Electronic Devices

學期

109-2

學分

3 學分

當期課號

4005

永久課號

CST5062

開課單位

國際半導體產業學院碩士班

授課教師

葉勝玄

校區

光復

類別

選修

上課時間表

節	週二
5 13:20–14:10	低維度電子元件專題 EE113 3 節連堂
6 14:20–15:10
7 15:30–16:20

* 根據陽明交大上課時間表所列

概述

Course descriptions: In this course, we will introduce the basic knowledge in solid state physics and discuss several selected topics in low-dimensional electronic devices. First, we will briefly review the quantum mechanics and apply these principles to develop the basic concepts of solid state physics, including band theory and charge transport properties in metals and semiconductors. Then, in terms of these knowledge, we will discuss electronic transport properties in low-dimensional electron systems, e.g., quasi-1D nanostructures and 2D materials. Finally, we will discuss the low-frequency (1/f) noise properties in metallic nanowires and 2D semiconductors. Objectives of this course: 1. Students will learn the brief concepts of solid state physics. 2. Students will learn several selected topics in low-dimensional electronic devices, including electronic transport properties in quasi-1D nanostructures and 2D materials, and the low-frequency (1/f) noise properties in metallic nanowires and 2D semiconductors.

先修科目

It would be better that the students have learned basic calculus, general physics, and introduction to quantum mechanics.

評分方式

Participations: 20%. Homework: 20%. Midterm Exam and Quizzes: 30%. Final Exam (or Report): 30%

週次計畫

週次	主題
第 1 週	The wave mechanics of electrons: The Schrödinger equation. Particles in a box. Atomic energy levels. Covalent bonding, ionic bonding, and metallic crystals.
第 2 週	Electrons in metals (free-electron model): Quantum free-electron gas. The free-electron gas at absolute zero. Density of states. The free-electron gas at non-zero temperature. Dynamics of the free-electron gas.
第 3 週	Electrons in crystals (I): Bloch’s theorem. Energy gaps.
第 4 週	Electrons in crystals (II): Electron dynamics in energy bands. Effective mass. Metals, semiconductors, and insulators. Holes.
第 5 週	Semiconductors (I): Intrinsic semiconductors. Extrinsic semiconductors. Carriers in extrinsic semiconductors.
第 6 週	Semiconductors (II): Carrier drift in semiconductors. Semiconductor band structures. Experimental determination of electronic structures.
第 7 週	Electronic transport in quasi-1D nanostructures (I): Semi-classical descriptions. Conductance quantization. Landauer conductance formula. Charge mobility.
第 8 週	Midterm exam.
第 9 週	Electronic transport in quasi-1D nanostructures (II): Scattering mechanism. Scattering length. Quasi-ballistic transport in nanowire transistors.
第 10 週	Electronic transport in 2D materials (I): Introduction to 2D materials. Tunable band structure. Electronic transport.
第 11 週	Electronic transport in 2D materials (II): Van der Waals heterojunctions. Composite films. Future outlooks.
第 12 週	1/f noise in metallic nanowires (I).
第 13 週	1/f noise in metallic nanowires (II).
第 14 週	1/f noise in semiconductors (I).
第 15 週	1/f noise in semiconductors (II).
第 16 週	Final exam (or report).

教科書

[1] D. K. Ferry and J. P. Bird, Electronic Materials and Devices (Academic Press, 2001). [2] J. P. Colinge, J. C. Greer, and Jim Greer, Nanowire Transistors: Physics of Devices and Materials in One Dimension (Cambridge University Press, 2016). [3] T. Grasser (ed.), Noise in Nanoscale Semiconductor Devices (Springer Nature Switzerland AG., 2020)

Office Hours

聯絡方式: Email: sunshine@nctu.edu.tw