功率半導體:元件設計、物理特性及可靠度
Power semiconductor devices: Device design, Characteristics, and Reliability
| 節 | 週三 |
|---|---|
2 09:00–09:50 | 功率半導體:元件設計、物理特性及可靠度 EE116 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Power electronics can be found in everything from cellphones and laptops to gasoline/electric vehicles, industrial motors and inverters that connect solar panels to the electric grid. The key parts inside power electronics are power semiconductor devices, which are at the heart of electrical energy consumption. This course focuses on power semiconductor devices from basic physical models, transport properties, and the understanding of different device concepts, e.g. power diodes, power MOSFETs, BJT, thyristors, and IGBT. In addition, advanced power devices with wide bandgap materials, i.e. GaN and SiC, and the reliability issues will be discussed. Intended Learning Outcomes (ILOs): By the end of this class, you should be able to: 1. Understand the important role of power devices in energy-efficient electronics 2. Explain the basic materiel properties and device physics. 3. Apply the device physics to evaluate the operation principles of power semiconductor devices. 4. Evaluate the state-of-art wide bandgap power devices
Graduate students who are following Semiconductor Device Physics (I) in the same semester or have followed Semiconductor Device Physics (I) before .
Powerpoint with some video/on-line lectures are used. Digital notes in the powerpoint are provided after each chapter.
An oral presentation based on a selected topic: 35% Final open-book written exam: 35% Homework: 15% Attendance: 15%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction and Emergence of power semiconductor devices |
| 第 2 週 | Materials Properties and Transport Physics |
| 第 3 週 | Materials Properties and Transport Physics |
| 第 4 週 | Semiconductor Junctions |
| 第 5 週 | Power Diodes and rectifiers |
| 第 6 週 | Power MOSFETs |
| 第 7 週 | No class |
| 第 8 週 | Bipolar Transistors and Thyristors |
| 第 9 週 | Bipolar Transistors and Thyristors |
| 第 10 週 | Insulated Gate Bipolar Transistors (IGBTs) |
| 第 11 週 | Insulated Gate Bipolar Transistors (IGBTs) |
| 第 12 週 | Wide Band gap power devices |
| 第 13 週 | Power device measurement demo sessions |
| 第 14 週 | Oral presentation preparation |
| 第 15 週 | Oral presentation |
| 第 16 週 | Optional |
| 第 17 週 | Final exam |
1. B. J. Baliga, Fundamentals of Power Semiconductor Devices,2nd edition, 2018. 2. D. Neamen, Semiconductor Physics And Devices, 4th edition, 2012.
- 地點
- Microelectronics and Information Research Center (MIRC) 601
- 時間
- 2pm -3pm on Monday or by appointment
- 聯絡方式
- Feel free to contact me : tlwu@nctu.edu.tw