二維電子材料與系統導論
Introduction to two-dimensional materials and systems
| 節 | 週二 |
|---|---|
5 13:20–14:10 | 二維電子材料與系統導論 EE116 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Course description: The dimension of semiconductor devices is continuously shrinking to prolong Moore's law. In the foreseeable future, quantum phenomena will become more and more profound, which may seriously affect the characteristics of future electronic devices and impede the further downsizing. Development of novel semiconductor materials such as two-dimensional (2D) materials may resolve this problem. Thus, understanding the physics in such low-dimensional materials and systems is demanded. In this course, we will introduce several fundamental topics in low-dimensional material and systems, including nanowires and 2D materials. First, we will briefly review the quantum mechanics and apply these principles to develop the basic concepts of solid state physics, including band theory and charge transport properties in metals and semiconductors. Then, in terms of these knowledge, we will discuss electrical transport properties in low-dimensional electron systems such as quasi-1D nanostructures and 2D materials. Finally, we will learn the low-frequency (1/f) noise properties in metallic nanowires and 2D semiconductors. Objectives of this course: Students will learn several fundamental topics in low-dimensional electronic devices, including electrical transport properties in quasi-1D nanostructures and 2D materials, and the low-frequency (1/f) noise properties in metallic nanowires and 2D semiconductors.
Homework: 30% Midterm Exam: 35% Final exam (or report): 35%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Course introduction. |
| 第 2 週 | The wave mechanics of electrons: The Schrödinger equation. Particles in a box. Atomic energy levels. Covalent bonding, ionic bonding, and metallic crystals. |
| 第 3 週 | Electrons in metals (free-electron model): Quantum free-electron gas. The free-electron gas at absolute zero. Density of states. The free-electron gas at non-zero temperature. Dynamics of the free-electron gas. |
| 第 4 週 | Electrons in crystals (I): Bloch’s theorem. Energy gaps. |
| 第 5 週 | Electrons in crystals (II): Electron dynamics in energy bands. Effective mass. Metals, semiconductors, and insulators. Holes. |
| 第 6 週 | Semiconductors (I): Intrinsic semiconductors. Extrinsic semiconductors. Carriers in extrinsic semiconductors. |
| 第 7 週 | Semiconductors (II): Carrier drift in semiconductors. Semiconductor band structures. Experimental determination of electronic structures. |
| 第 8 週 | Midterm exam. |
| 第 9 週 | Electronic transport in quasi-1D nanostructures (I): Semi-classical descriptions. Conductance quantization. Landauer conductance formula. Charge mobility. |
| 第 10 週 | Electronic transport in quasi-1D nanostructures (II): Scattering mechanism. Scattering length. Quasi-ballistic transport in nanowire transistors. |
| 第 11 週 | Electronic transport in 2D materials (I): Introduction to 2D materials. Tunable band structure. Electronic transport. |
| 第 12 週 | Electronic transport in 2D materials (II): Van der Waals heterojunctions. Composite films. Future outlooks. |
| 第 13 週 | 1/f noise in metallic nanowires (I). |
| 第 14 週 | 1/f noise in metallic nanowires (II). |
| 第 15 週 | 1/f noise in 2D semiconductors (I). |
| 第 16 週 | 1/f noise in 2D semiconductors (II). |
| 第 17 週 | Final exam (or report). |
[1] D. K. Ferry and J. P. Bird, Electronic Materials and Devices (Academic Press, 2001). [2] J. P. Colinge, J. C. Greer, and Jim Greer, Nanowire Transistors: Physics of Devices and Materials in One Dimension (Cambridge University Press, 2016). [3] T. Grasser (ed.), Noise in Nanoscale Semiconductor Devices (Springer Nature Switzerland AG., 2020).
- 地點
- TBD
- 時間
- TBD
- 聯絡方式
- ssyeh@nycu.edu.tw