複合物半導體元件與製程
Intro. to Compound Semiconductor Device & Process
| 節 | 週一 | 週四 |
|---|---|---|
6 14:20–15:10 | 複合物半導體元件與製程 EF201 2 節連堂 | |
7 15:30–16:20 | ||
8 16:30–17:20 | 複合物半導體元件與製程 EF201 |
* 根據陽明交大上課時間表所列
To familiarize students with the knowledge of compound semiconductor related materials, device and process technologies Contents: 1. Introduction of III-Vmaterials 2. GaAs material characteristics 3. GaAs material growth techniques 4. Bandgap engineering. 5. Epitaxy growth techniques: LPE, HVPE, MOCVD, MBE, 6. Physics of compound semiconductor devices:including FET, MESFET, HEMT and HBT 7. Fabrication process technologies for compound semiconductor devices. Including: Ion implantation, Lithography, Wet and Dry etch, Passivation, Isolation, PECVD , Metallization, Plating, Process control monitoring technology 8. InP technology 9. GaN material & devices
Electronic Materials, Semiconductor Device and Physics or related courses
References: 1. "Modern GaAs processing Methods" Ralph E. Williams, 1990 2. "SiGe ,GaAs and Inp Hetrojunction Bipolar Transistos" Jiam S. Yuan, 1990
1. Midterm Exam 40% 2. Final Exam 40% 3. Home works 20%
Class Notes