半導體製程技術

Course content: (1) Introduction to fabrication techniques for MOS-devices, and the electrical performance of devices based on these techniques, (2) fundamental principles of fabrication processes, models for crystal growth, oxidation, diffusion, ion implantation, etching, deposition, and metallization, (3) the implications for device performance caused by material properties and fabrication techniques. Course objectives: To introduce students the processing and theories of semiconductor device fabrication based on current methodologies.

Semiconductor Device and Physics

Quiz/ homework 15% Midterm 30 %/ Final exam 30 % Final project 15 % Classroom participation 10%

Textbook: Hong Xiao, “Introduction to Semiconductor Manufacturing Technology,” 2nd Ed., SPIE (2012) References: J. D. Plummer, M. D. Deal, and P. B. Griffin, “Silicon VLSI Technology-Fundamentals, Practice and Modeling,” Prentice Hall (2000) S. M. Sze and M. K. Lee, “Semiconductor Devices Physics and Technology,” 3rd Ed., John Wiley & Sons Inc (2012) Robert F. Pierret, “Semiconductor Device Fundamentals,” Addison Wesley (1996) C. Y. Chang and S. M. Sze, “ULSI Technology,” McGraw Hill (1996)