先進的化合物半導體器件及其應用
Advanced Compound Semiconductor Devices And Their Applications
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 先進的化合物半導體器件及其應用 ES601 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
This graduate level course will cover: Physics, modeling, properties, bandgap engineering, device fabrication, design and application of compound semiconductor devices. Emphasis will be placed on high frequency HEMT, HBT, 2-D material based devices and Tera hertz technology. Focus will be on GaN hetero structure based devices, hetero epitaxy, fabrication and applications. On hand training using S-parameter, smith chart concerning the application of devices will be provided. Discussion on hetero epitaxial devices will consist of on chip fabrication of microwave, photonic and digital devices. Packaging, combining and integration of chips will be discussed. Discussion will be on chip receiver including components like LNA, antenna.
Course will discuss current state of the art of HEMT technology, InP HBT, GaN power HEMT, FinFET , high frequency GaN CMOS, 2D material and devices, THz technology, quantum structures, spintronics, hetero epitaxy and device processing & characterization . Various commercial applications of such technology to be covered. Note: Course will be taught by professor Krishna Pande (Fellow of IEEE and pioneer of InP technology) both online and in class room.
Lecture notes will be provided by TA's.
1) Midterm Exam: 30% 2) Final exam- 30% 3) Final Presentation-40%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction to current state of the art and future technology. |
| 第 2 週 | Physics, modeling, bandgap engineering of GaN HEMT and InP HBT. |
| 第 3 週 | Growth and fabrication of next gen compound semiconductor devices with commercial applications (for example high frequency HEMT and HBT). |
| 第 4 週 | Growth and fabrication of next gen compound semiconductor devices with commercial applications (for example high frequency HEMT and HBT). |
| 第 5 週 | Device packaging and testing. |
| 第 6 週 | Hetero epitaxy and stacking of microwave, photonics and digital devices on a chip. |
| 第 7 週 | Design and fabrication of receiver components, an example of device applications. |
| 第 8 週 | Midterm |
| 第 9 週 | 2-D materials and devices. |
| 第 10 週 | Spintronics and quantum structures. |
| 第 11 週 | Tera hertz devices |
| 第 12 週 | Device characterization using S-parameters. |
| 第 13 週 | Device impedance evaluation using smith chart. |
| 第 14 週 | Introduction to design software ADS and HFSS for on hand training. |
| 第 15 週 | Final exam |
| 第 16 週 | Holiday |
| 第 17 週 | Biotech application |
| 第 18 週 | Heteroepitaxial devices |
No good text book (under evaluation) is available currently. Hence instructor notes will be used for teaching. However, following books will be consulted (all of these books are available in NCTU library): 1) Compound semiconductor materials and devices Morgan & Claypool Publishers, 2016. 2) Compound semiconductor technology, Colliver, David J. Dedham, Mass: Artech House c1976. 3) Compound semiconductor device modelling, London : Springer-Verlag c1993.
- 地點
- By Appointment
- 時間
- By Appointment
- 聯絡方式
- kppande@nctu.edu.tw