記憶體電路及系統設計
Memory Circuits and System
| 節 | 週四 |
|---|---|
5 13:20–14:10 | 記憶體電路及系統設計 EE102 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
The goal of this course aims to learn the fundamental memory circuits and to gain the basic understanding of hierarchy memory system design methodology. The first part of the course focuses on the embedded-memory circuit design from latches, register file, SRAM, CAM to embedded DRAM and embedded non-volatile memory. We then discuss the design challenges and techniques of high-performance SRAM in nanoscale CMOS technologies. The impacts of technology scaling, such as signal loss due to leakage and degradation of noise margin due to Vt scatter are addressed. Design directions and leakage/variation/degradation tolerant SRAM circuit techniques to mitigate various performance and reliability constraints are discussed and examples are given and merits discussed. Alternative cell structures for low-voltage SRAM. Some design issues and opportunities in advanced technologies are illustrated. The second part of the course covers the basics of DRAM and embedded NVRAM. It is intended to introduce the students to the basic idea, cell structure, and sensing schemes of these memories. The third part of this course is to discuss the hierarchy memory system from the aspect of applications, including memory interface, 3D memory, memory coherence and computation-in-memory.
Electronics Circuit Theory Digital IC
10% Class participation 60% Exercises 30% Final project
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction to Memory System and Memory Hierarchy |
| 第 2 週 | Design of Single-Bit Memory (Latch & Flip-Flop) |
| 第 3 週 | SRAM Design – Cell Design |
| 第 4 週 | SRAM Design – Peripheral Circuits |
| 第 5 週 | Power Consumption of SRAM |
| 第 6 週 | Advanced Design Technologies of FinFET SRAM |
| 第 7 週 | Multi-port memory, FIFO and CAM |
| 第 8 週 | Fundamental DRAM |
| 第 9 週 | Fundamental Flash Memory |
| 第 10 週 | Cache and Scratchpad memory |
| 第 11 週 | Energy-Efficient Memory Hierarchy for Deep Learning |
| 第 12 週 | Analog SRAM-based Computation-in-memory circuits |
| 第 13 週 | Digital SRAM-based Computation-in-memory circuits |
| 第 14 週 | NVM-based Computation-In-Memory Circuits |
| 第 15 週 | 3D Memory and High-Bandwidth Memory |
| 第 16 週 | Near-memory Computing |
| 第 17 週 | |
| 第 18 週 |
Class notes on the website, and no textbook. The class materials are mainly based on papers published at international conferences and journals in recent years and supplemented with materials from tutorials. All materials will be distributed and posted in the web as well. Reference Books [1] B. Jacob et al, “Memory Systems- Cache, DRAM and Disk”, Morgan Kaufmann 2008 [2] K Itoh, VLSI Memory Chip Design”, Springer 2001 [3] B Keeth et al, “DRAM Circuit Design: Fundamentals and High Speed Topics”, 2007 [4] G. Campardo et al, “VLSI Design of Non-Volatile Memories”, Springer 2004 [5] C. Kim and H. Lee, “High-Bandwidth Memory Interface”, Springer 2013 [6] Jan M. Rabaey, Anantha Chandrakasan and Borivoje Nikolic, “Digital Integrated Circuits”, 2004
- 地點
- MIRC 301
- 時間
- After class or by appointment
- 聯絡方式
- By email