校際選修

115-1 選課時程

進行中

  • 初選第一階段 6/15/2026
  • 初選第二階段 6/22/2026
  • 校際選修 8/24/2026
  • 初選第三階段 8/31/2026
  • 開學後加退選 9/7/2026
  • 逾期加退選 9/21/2026
選課資源

電漿科學與工程

Plasma Science and Engineering

學期
112-1
學分
3 學分
當期課號
535372
永久課號
EECM30144
開課單位
電信工程研究所
授課教師
寒川誠二
校區
光復
類別
選修
上課時間表
週三
7
15:30–16:20
電漿科學與工程
ED203
3 節連堂
8
16:30–17:20
9
17:30–18:20

* 根據陽明交大上課時間表所列

概述

Nanofabrication of advanced devices such as ULSIs, nanomachines, high-power, high-frequency, and optical devices, and bio chips are realized by means of reactive plasmas, reactive particle beams and so on, via interaction between the device material and microscopic particles such as atoms, molecules, ions, radicals, and photons. This lecture will introduce behavior and interaction of such microscopic particles in plasma processes such as reactive plasma, beam, and atom/molecule handling which are basis of advanced technologies. Measurement methods of such interactions will be explained. Examples of advanced devices and nano-processes used in these devices advanced industries will be introduced.

先修科目

普物

教學方式

Lectures will be given by using PPTX Projections

評分方式

Attendance - 32% Homework - 20% Mid-term report - 24% Final - 24%

週次計畫
週次主題
第 1 週Course Overview (1 lecture)
第 2 週Course Overview (1)
第 3 週High Density and Low Pressure Plasma (2)
第 4 週High Density and Low Pressure Plasma (2)
第 5 週Plasma Etching (2)
第 6 週Plasma Etching (2)
第 7 週Plasma Chemical Vapor Deposition and Surface Modification (2)
第 8 週Plasma Chemical Vapor Deposition and Surface Modification (2)
第 9 週Midterm Report
第 10 週Pulsed Plasma Processes (2)
第 11 週Pulsed Plasma Processes (2)
第 12 週Neutral Beam Atomic Layer Processes (2)
第 13 週Neutral Beam Atomic Layer Processes (2)
第 14 週Green nanotechnology created by plasma process (2)
第 15 週Green nanotechnology created by plasma process (2)
第 16 週Final Test
教科書

Selected Papers and Lecture Notes will be Available

Office Hours
時間
每週三下午1:20-3:20
聯絡方式
電話或Email: seiji.samukawa.e2@nycu.edu.tw