半導體光電
Semiconductor Optoelectronics
| 節 | 週四 |
|---|---|
5 13:20–14:10 | 半導體光電 EE116 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
The course provides an introduction to optoelectronic device operation and design, which are important components in optical communication systems, consumer electronics, IT systems and atomic clocks. Assuming an electrical/electronic or physics undergraduate level background in semiconductor physics, the course begins with a recap of this essential topic, followed by the study of interaction of photons with electrons and holes in a semiconductor, leading to the realization of semiconductor photon amplifiers, LEDs, lasers, modulators, and photodetectors. A variety of designs and configurations of these devices are considered with application-specific characteristics. The course is ‘applied’ in nature.
Basic semiconductor physics
Class participation, discussion (30%) Mid-term test (30%) Final exam (40%)
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction lecture, Energy bands in solids, the E-k diagram |
| 第 2 週 | Density of states I, Density of states II, Density of states in a Quantum well |
| 第 3 週 | Occupation Probability & amp Carrier Concentration, Carrier Concentration & amp Fermi Level, Quasi Fermi Levels |
| 第 4 週 | Semiconductor Materials, Semiconductor Heterostructures-Lattice-Matched Layers, Strained-Layer Epitaxy and Quantum Well Structures |
| 第 5 週 | Bandgap Engineering, Heterostructure p-n junctions, Schottky Junctions & amp Ohmic Contacts |
| 第 6 週 | Fabrication of Heterostructure Devices, Interaction of Photons with Electrons and Holes in a Semiconductor, |
| 第 7 週 | Optical Joint Density of States, and Probabilities of Emission and Absorption, Rates of Emission and Absorption, Amplification by Stimulated Emission |
| 第 8 週 | The Semiconductor (Laser) Amplifier, Absorption Spectrum of Semiconductors, Gain and Absorption Spectrum of Quantum Well Structures |
| 第 9 週 | Mid-term test |
| 第 10 週 | Electro-absorption Modulator - Principle of Operation and device configuration, Light emitting diode - 1 Device structure and parameters, Light emitting diode-II Device Characteristics |
| 第 11 週 | Light emitting diode-III Output Characteristics, Light emitting diode-IV Modulation Bandwidth, Light emitting diode-V Material and Applications |
| 第 12 週 | Laser Basics, Semiconductor Laser-I Device Structure, Semiconductor Laser-II Output Characteristics, |
| 第 13 週 | Semiconductor Laser-III Single Frequency Lasers, Vertical cavity Surface Emitting Laser (VCSEL), Quantum Well Laser, |
| 第 14 週 | General Characteristics of Photodetectors, Responsivity & amp Impulse Response, Photoconductors |
| 第 15 週 | Semiconductor Photo-Diodes-I: PIN Diode, Semiconductor Photo-Diodes-II: APD, Other Photodetectors, |
| 第 16 週 | Class revision |
| 第 17 週 | Final exam |
| 第 18 週 | Review of exam and course |
B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, John Wiley & Sons, Inc., 2 nd Ed. (2007), Ch.16, 17, and 18. G. Ghione, Semiconductor Devices for High-Speed Optoelectronics, Cambridge University Press (2009) A. Yariv and P. Yeh, Photonics: Optical Electronics in Modern Communication, Oxford University Press (2007), 6 th Ed., Ch.15-17. G. Keiser, Optical Fiber Communications, McGraw-Hill Inc., 3 rd Ed. (2000), Ch.4, P. Bhattacharya, Semiconductor Optoelectronic Devices, Prentice Hall of India (1995). J. Singh, Semiconductor Optoelectronics: Physics and Technology, McGraw-Hill Inc. (1995). Greg Parker, Introductory Semiconductor Device Physics, Prentice Hall, 1994
- 地點
- By appointment
- 時間
- By appointment
- 聯絡方式
- ntumilty@nctu.edu.tw