半導體元件物理與奈米電晶體
Semiconductor Device Physics and Nanometer Scale Transistors
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體元件物理與奈米電晶體 CS100 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
This course covers the physics of solid-state electronic devices, including p-n junctions, MOS devices, field-effect transistors, bipolar transistors, etc. Principles of CMOS and bipolar scaling to nanometer dimensions and their high frequency performance factors in digital and analog circuits will be taught.
Graduate students and senior undergraduate students can take the course
1.學期作業、考試、評量: Weekly-biweekly HWs without handing in. No grading. Solutions will be given. 考試方式..All tests are open book, open notes, calculator allowed. 考評項目其所佔總分比率.. Midterm 1: 25% of total score. Midterm 2: 25% of total score. Final: 50% of total score. 2.教學方法及教學相關配合事項(如助教、網站或圖書及資料庫等) 線上同步教學
| 週次 | 主題 |
|---|---|
| 第 1 週 | Course contents Chapter 2 Basic Device Physics |
| 第 2 週 | Chapter 3 p-n Junctions and Metal-Silicon Contacts |
| 第 3 週 | Chapter 4 MOS Capacitors |
| 第 4 週 | Chapter 4 MOS Capacitors |
| 第 5 週 | Chapter 5 MOSFETs: Long Channel |
| 第 6 週 | Fabrication Processes Mid-term 1 |
| 第 7 週 | Chapter 6 MOSFETs: Short Channel |
| 第 8 週 | Chapter 6: MOSFETs Short Channel / High Mobility Channels, Cryo-CMOS |
| 第 9 週 | Chapter 7: SOI and Double-Gate MOSFETs Scaling: Device/Structure & Low-dimensional channels |
| 第 10 週 | Chapter 8 CMOS Performance Factors |
| 第 11 週 | Chapter 8: CMOS Performance Factors Mid-term 2 |
| 第 12 週 | Chapter 10 Bipolar Device Design SiGe HBT |
| 第 13 週 | Wide-bandgap HF and Power Devices (intro) |
| 第 14 週 | Optoelectronic Devices |
| 第 15 週 | Chapter 12 Memory Devices |
| 第 16 週 | Emerging Memory Devices (intro) Final |
1.教科書:"Fundamentals of Modern VLSI Devices, 3rd ed." by Yuan Taur and Tak Ning, Cambridge University Press, 2022. 2.講義:Power-Point slides and WORD files of the book will be made available.