半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體物理及元件(一) EE106 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Semiconductor technologies become the necessary to enable high performance electronic products. Recently, the demanding of the new applications, such as 5G, AI, cloud computing, and Electric vehicle, trigger the innovations of the semiconductor technologies. The core knowledge for the state-of-the-art semiconductor technologies is the Semiconductor Physics and Devices, which is essential for every researchers and engineers. In this class, the properties for the semiconductor materials, the physics of the carrier drift, and the operation principals for the most important devices architectures, i.e., Diode, BJT, MOSFET, and JFET, will be introduced and discussed in details. Furthermore, the recent progress and challenges in developing beyond Moore's law technologies will be reviewed. 半導體技術是高性能電子產品中的關鍵。近年來,新興應用於5G、人工智慧、雲端計算及電動車觸發了更多半導體技術的創新。先進半導體技術的關鍵知識是半導體物理與元件,對每個半導體產業的研究員及工程師都是必要的知識。這門課中將會介紹半導體材料特性、載子飄移機制及重要半導體元件的操作原理。此外,此課程也會介紹超越摩爾定律的最新半導體技術及挑戰。 Intended Learning Outcomes (ILOs): By the end of this class, you should be able to: 1. Explain the basic materiel properties and device physics. 2. Apply the device physics to evaluate the operation principles of p-n diodes, MOSFETs, BJTs, and JFETs. 3. Evaluate the current issues in the scaling technologies (More Moore technologies), e.g., short channel effects, ultra-thin dielectric, subthreshold swing (SS), etc. -Identify the problems 4. Propose the designs to overcome the challenges in the scaling semiconductor technologies. -Innovation is about the problem-solving 預期學期成果: 在本課程結束時,修課的學生能夠: 1.解釋半導體材料特性及元件物理 2.利用元件物理分析半導體原件操作原理。 3.評估在微縮下半導體元件的議題,包含短通道效應、超薄介電層及次臨界擺伏限制。 4.提出元件設計來克服半導體元件發展的挑戰。
1. 研究所及大學部同學有基礎物理知識 Graduate students/ undergraduate students who have knowledge in basic physics. 2. 對半導體技術有熱情 Passion in semiconductor technologies
投影片並搭配線上影音 Powerpoint with some video/on-line lectures are used. 電子筆記 Digital notes in the powerpoint are provided after each chapter.
Midterm exam 37.5% Final exam 37.5% Homework 15%, Class participation 10%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction |
| 第 2 週 | The Crystal Structure of Solids |
| 第 3 週 | Holiday |
| 第 4 週 | Introduction to Quantum Mechanics and Quantum Theoryof Solids |
| 第 5 週 | The Semiconductor in Equilibrium & amp Carrier Transport |
| 第 6 週 | The Semiconductor in Equilibrium & amp Carrier Transport |
| 第 7 週 | Nonequilibrium Excess Carriers in Semiconductors |
| 第 8 週 | Holiday |
| 第 9 週 | The pn Junction |
| 第 10 週 | The pn Junction Diode / Midterm |
| 第 11 週 | Metal-Semiconductor/Fundamentals of the Metal–Oxide Semiconductor Field-Effect Transistor |
| 第 12 週 | Fundamentals of the Metal–Oxide Semiconductor Field-Effect Transistor |
| 第 13 週 | Metal–Oxide–Semiconductor Field-Effect Transistor Additional Concepts |
| 第 14 週 | Bipolar Junction Transistors |
| 第 15 週 | Bipolar Junction Transistors/ Junction Field-Effective Transistors |
| 第 16 週 | Optional class |
| 第 17 週 | Final exam |
| 第 18 週 |
1. D. Neamen, Semiconductor Physics And Devices, 4th edition (2012) 2. Lecture notes
- 地點
- Microelectronics and Information Research Center (MIRC) 601
- 時間
- 2pm -3pm on Monday or by appointment
- 聯絡方式
- Feel free to contact me : tlwu@nycu.edu.tw