元件精簡模型
Compact Modeling
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 元件精簡模型 EE117 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Compact models serve as a bridge or a translator between the physics-based half of the semiconductor industry (devices and foundries) and its computer-based half (EDA tools and IC design). This course will comprehensively cover the physics and compact modeling aspects of MOS capacitors, planar MOSFETs, and advanced FETs such as FinFETs and Nanosheet/Gate-all-around FET, along with their non-ideal effects. The course aims to delve into the strategies for developing models that meet the industry's requirements for accuracy, computational speed, and robustness. Students will be introduced to industry-standard models such as BSIM-CMG, BSIM-IMG, and BSIM-BULK, and will also learn benchmarking tests for compact models. Additionally, the course will familiarize students with commercial software, including TCAD, SPICE simulators, parameter extraction tools, and the Verilog-A hardware description language, preparing them for real-world applications.
Semiconductor physics fundamentals
Weekly assignments, 1 course project, 2 quizzes (one before the mid-semester and one after the end semester), 2 exams (mid-semester and end semester)
| 週次 | 主題 |
|---|---|
| 第 1 週 | Device Modeling Introduction: Different types of models (physical vs empirical, analytical modeling vs compact modeling); Introduction to the semiconductor industry and its different groups, Need for compact models for IC design; Compact modeling requirements: convergence, computational speed, accuracy, and differentiability. Simulation Introduction: Introduction to different types of simulations (atomistic, TCAD, SPICE), SPICE circuit simulation and how it works. |
| 第 2 週 | Simulation Introduction: SPICE syntax and netlist; Different types of SPICE circuit analysis (DC, AC, and transient, etc.); Verilog-A language and its importance for compact modeling; Verilog-A syntax and coding. |
| 第 3 週 | 3 March 4 Compact Modeling Tools: Modeling simplifications and piecewise models; Smoothing, clamping, and stitching functions, and Numerical methods for implicit equation solving. Recap of Semiconductor Physics Fundamentals: Workfunction and electron affinity, Energy band diagram in equilibrium, Contact potential, Carrier statistics, Quasi-Fermi level, Electrostatics (boundary conditions, Poisson’s equation, etc.) |
| 第 4 週 | Modeling of Metal Oxide Semiconductor (MOS) capacitor: Types of oxide charges, Flat band voltage, Impact of gate biasing conditions: physics of accumulation, depletion, and inversion; Relationship between channel charge-density and surface potential. |
| 第 5 週 | Modeling of Metal Oxide Semiconductor (MOS) capacitor: charge/surface potential approximations in different MOS operating regions, Numerical solution of surface potential for applied gate bias, Small signal gate and channel capacitances; Body factor; Impact of high frequency, and fast transient operation. |
| 第 6 週 | MOSFET Modeling: MOSFET structure and operating principles; Impact of quasi-Fermi potential: Charge-surface potential relation, and Accumulation, depletion, and inversion characteristics. |
| 第 7 週 | MOSFET Modeling: Pinch-off voltage; Surface potential-based current model; Simplified current models; Subthreshold Swing and Boltzmann limit; Threshold voltage; Charge based modeling; Case studies of industry-standard BSIM4 and BSIM-BULK models. |
| 第 8 週 | Mid-term exam |
| 第 9 週 | Modeling of Real Device Effects: Mobility degradation and different scattering mechanisms; Impact of parasitic series resistances; Temperature Effects; Self Heating; Velocity saturation; Channel length modulation; Ballistic operation. |
| 第 10 週 | Modeling of Real Device Effects: Short channel effects; Narrow width effects, Drain induced barrier lowering, Punch-Through, Impact Ionization, Quantum Mechanical Effects, Gate current, Band to band tunneling and Gate induced drain leakage, Junction leakage. |
| 第 11 週 | Transient Modeling: Quasi-static approximation, Modeling of terminal charges and charge partitioning schemes, Transit time, Limitations of quasi-static approach. |
| 第 12 週 | Transient Modeling: Introduction to non-quasi-static models Small Signal Modeling: Small signal conductances and capacitances, Cut-off frequency. |
| 第 13 週 | Introduction to device variability and noise: Local variations vs global variation, Monte Carlo simulation in SPICE, Types of noise and their modeling. |
| 第 14 週 | Advanced MOSFET Models: Moore’s law and Dennard’s Scaling, Semiconductor technology trends over the years, Introduction to FinFET, FDSOI, and GAAFET technologies, Introduction to industry standard BSIM-IMG and BSIM-CMG models, High Voltage MOSFETs. |
| 第 15 週 | Industry compact model features and tests: Parameter Binning, Instance parameters vs model parameters, local parameter fitting vs global parameter fitting; Benchmarking tests. |
| 第 16 週 | Final exam. |
1. Y. Tsividis and C. McAndrew, "Operation and Modeling of the MOS Transistor", Oxford Univ. Press, 2010 2. G. Gildenblat, "Compact Modeling: Principles, Techniques and Applications", Springer, 2010 3. W. Liu and C. Hu, "Bsim4 and MOSFET Modeling For IC Simulation", World Scientific Publishing Co., 2011 4. CC Enz, “Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design”. John Wiley & Sons; 2006. 5. C. Hu, "Modern Semiconductor Devices for Integrated Circuits", Pearson, 2009