電子學(一)
Electronics (I)
學期
113-1
學分
3
學分
當期課號
515011
永久課號
EEEC10026
開課單位
電機系共同課程
授課教師
趙昌博
校區
光復
類別
必修
上課時間表
| 節 | 週一 | 週四 |
|---|---|---|
3 10:10–11:00 | 電子學(一) EE623 2 節連堂 | |
4 11:10–12:00 | ||
7 15:30–16:20 | 電子學(一) EE623 2 節連堂 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
概述
本課程教導基本電子學理論(1),其中包括各種基本電子元件與電子電路分析之方法,是電子及電機工程之重要基礎課程之一。本課程適合電子工程或電機工程之大學部初學者修習。
先修科目
物理 微積分
評分方式
作業 15%, 期中考 (1) 25%, 期中考 (2) 25%, 期末考 25%, 調分 10%
週次計畫
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction Signal sources in electronicsFour amplifier models(Reading assignment: handout/video 1.1~1.22) |
| 第 2 週 | Frequency response of amplifiers(Reading assignment : handout/video 1.23~1.29)Basic properties of semiconductors(Reading assignment: handout/video 1.30~1.42) |
| 第 3 週 | PN Junction under open-circuit, reverse-bias, and forward-bias conditions(Reading assignment: handout/video 1.43~1.64) |
| 第 4 週 | Ideal operational amplifiers Inverting and noninverting configurations Difference amplifier(Reading assignment: handout/video 2.1~2.22) |
| 第 5 週 | Integrators and differentiators Nonidealities of OPAMP(Reading assignment: handout/video 2.23~2.40) |
| 第 6 週 | The ideal diodes Limiter Terminal characteristics of junction diodes Diode modeling Voltage regulators(Reading assignment: handout/video 3.1~3.25) |
| 第 7 週 | Rectifiers and other diode applications(Reading assignment: handout/video 3.26~3.39)期中考(I)-10/26 |
| 第 8 週 | BJT device structure and physical operation I-V characteristics of BJT Early Effect(Reading assignment: handout/video 4.1~4.18) |
| 第 9 週 | BJT large signal equivalent circuits DC analysis of BJT circuits (Reading assignment: handout/video 4.19~4.36) |
| 第 10 週 | BJT as a linear amplifier Load line and DC biased point Small signal equivalent circuit model(Reading assignment: handout/video 4.37~4.54) |
| 第 11 週 | Application of the small signal equivalent circuits in amplifier analysis Common emitter amplifiers(Reading assignment: handout/video 4.55~4.69) |
| 第 12 週 | Common base and common collector amplifiers(Reading assignment: handout/video 4.70-4.81)期中考 (II)-11/30 |
| 第 13 週 | MOSFET device structure and physical operationI-V characteristics Channel length modulation and body effects(Reading assignment: handout/video 5.1-5.15) |
| 第 14 週 | Breakdown and input protection MOSFETs circuits at DC Technology Scaling(Reading assignment: handout/video 5.16-5.30) |
| 第 15 週 | Applying MOSFET in amplifier design Small signal models Biasing Common source amplifiers Common gate amplifiers Source followers(Reading assignment: handout/video 6.1-6.23) |
| 第 16 週 | Discrete MOS amplifiers(Reading assignment: handout/video 6.24-6.32)期末考-12/28 |
教科書
Sandra Smith, “Microelectronic Circuits,” International 7th and 8th Editions, Oxford, 2016.