元件設計與模擬實驗

We learn how to use commercial available TCAD process and devicce simulators for design and simulation of emerging VLSI devices (mainly for MOSFETs/FinFET/GAA FETs, etc), III-V HEMTs, 2D-material FETs, etc. Stundets will be requested to hand on each lab in classes. We do not plan to discuss detail theory of TCAD simulation software. We mainly focus on hands-on simulation laboratories with introduction to execution instruction. 欲選修這堂課的學生第一堂課請務必出席,錯過就不再開放選修,上課地點在電子資訊大樓5樓503室。 本課程旨在學習使用半導體製程與元件之電腦模擬器用以模擬與分析超大型積體電路元件MOSFETs的製程與元件特性、高電子遷移率電晶體HEMTs的元件特性、以及半導體材料的電子結構(如能帶、有效質量等)。本課程以實驗操作為主,修課同學於每一次的實驗課上機動手實作。

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Basic concepts for all laboratories, TA demonstrations, hands-on your own lab., checks lab's results by TA on site, and submit your written report for that lab. after the class. 老師基本解說、助教帶操作、完成實驗並由老師或助教驗收,下課回去後撰寫並繳交實驗報告。

1. 10x5% = 50%; we will have ten labs and each lab has 5%. 2. Each enrolled student is required to conduct his/her own term project, it occupies 40% in total. 3. There is no midterm exam, but we have one final exam with open book. It is 10%. 1. 10次X5分=45分 每一次的單元實驗成績為5分,一共50分。 2. 修課的同學要做期末專題(包括期中提案報告, 實作驗收, 期末口頭與書面報告),佔40分。 3. 10分期末筆試,開書測驗。

• VLSI process simulation 超大型積體電路元件之製程模擬
• VLSI device simulation 超大型積體電路之元件模擬
• III-V HEMTs simulation 高電子遷移率電晶體模擬
• 2D material simulation 半導體奈米材料特性模擬

We provide printed hardcopy lecture nortes for enrolled students. 每回提供自編講義給修課同學。

地點

Teacher office: M I S R C 8 2 1 R, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan 老師辦公室:電資812室 (電子資訊大樓荷花池那一棟)

時間

Students are welcome to visit teacher's office on Wed. afternoon directly. You are encouraged to make an appointment for course discussion by email or office phone call. 每週三下午直接到老師辦公室,不用預約時間。亦可用老師提供的email 或 辦公室電話另約師生晤談時間。

聯絡方式

Email: y m l i @ m a i l . y m l a b . o r g Office tel: 0 3 --- 5 7 1 2 1 2 1 轉 5 2 9 7 4