半導體製程技術
Semiconductor Process and Technology
| 節 | 週二 |
|---|---|
7 15:30–16:20 | 半導體製程技術 SC158 3 節連堂 |
8 16:30–17:20 | |
9 17:30–18:20 |
* 根據陽明交大上課時間表所列
Course content: (1) Introduction to fabrication techniques for MOS-devices, and the electrical performance of devices based on these techniques, (2) fundamental principles of fabrication processes, models for crystal growth, oxidation, diffusion, ion implantation, etching, deposition, and metallization, (3) the implications for device performance caused by material properties and fabrication techniques. Course objectives: To introduce students the processing and theories of semiconductor device fabrication based on current methodologies.
Semiconductor Device and Physics
Midterm 35 % Final exam 35 % Group report 30 %
| 週次 | 主題 |
|---|---|
| 第 1 週 | |
| 第 2 週 | Introduction and basics |
| 第 3 週 | Holiday-Moon Festival |
| 第 4 週 | Cleanroom environment Cleaning technology |
| 第 5 週 | Wafer manufacturing and epitaxy |
| 第 6 週 | Oxidation and thermal processing |
| 第 7 週 | Implantation |
| 第 8 週 | Midterm exam |
| 第 9 週 | Lithography |
| 第 10 週 | Etching |
| 第 11 週 | Etching, Deposition |
| 第 12 週 | Deposition |
| 第 13 週 | Metallization |
| 第 14 週 | CMP |
| 第 15 週 | Process integration |
| 第 16 週 | Final exam |
Textbook: Hong Xiao, “Introduction to Semiconductor Manufacturing Technology,” 2nd Ed., SPIE (2012) References: S. M. Sze and M. K. Lee, “Semiconductor Devices Physics and Technology,” 3rd Ed., John Wiley & Sons Inc (2012) M. Quirk and J. Serda, “Semiconductor Manufacturing Technology,” Pearson (2008) J. D. Plummer, M. D. Deal, and P. B. Griffin, “Silicon VLSI Technology-Fundamentals, Practice and Modeling,” Prentice Hall (2000) Robert F. Pierret, “Semiconductor Device Fundamentals,” Addison Wesley (1996) C. Y. Chang and S. M. Sze, “ULSI Technology,” McGraw Hill (1996)
- 地點
- SC158
- 時間
- Tuesdays 15:30-16:30 or by appointment