半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體物理及元件(一) A306 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Semiconductor devices are the building blocks of modern electronics, enabling technologies from simple rectifiers to complex integrated circuits. These devices, such as diodes, transistors, and optoelectronic components, exploit the unique properties of semiconductor materials to control electrical signals and energy. The core knowledge of the semiconductor physics and devices, therefore has become essential for researchers and engineers. In this class, the properties for the semiconductor materials, the physics of energy band formation, carrier statistics and transport, and the operation principals for the most important devices architectures such as diode, BJTs, and MOSFETs will be introduced and discussed in details. Furthermore, the recent progress and challenges in developing beyond Moore's law technologies will be reviewed. Objectives: 1. Understand fundamental concepts of electric circuits and semiconductor devices 2. Analyze the operation and characteristics of key semiconductor devices such as p-n junctions, MOSFETs, BJTs, and LEDs. 3. Relate theoretical knowledge to the design and optimization of semiconductor devices for specific applications in electronics and photonics. 4. Investigate the role of semiconductors in cutting-edge technologies, including FinFET, GAA, silicon photonics, and advanced fabrication techniques.
Fundamentals of Physics
TA: TBD
Midterm exam: 30% Final exam: 30% Homework 40% Class participation: Bonus
| 週次 | 主題 |
|---|---|
| 第 1 週 | Course introduction Fundamentals of electronics – circuits and devices |
| 第 2 週 | Overview of semiconductors in modern technology |
| 第 3 週 | Crystal structure and band theory of solids |
| 第 4 週 | Energy band theory and carrier statistics |
| 第 5 週 | Carrier transport mechanisms |
| 第 6 週 | Mechanisms of generation and recombination |
| 第 7 週 | P-N junction diode |
| 第 8 週 | Midterm |
| 第 9 週 | Diode characteristics and applications |
| 第 10 週 | Metal-semiconductor contacts |
| 第 11 週 | Bipolar junction transistors (BJTs) |
| 第 12 週 | BJT characteristics and applications |
| 第 13 週 | Metal-oxide-semiconductor field-effect transistors (MOSFETs) |
| 第 14 週 | MOS characteristics and applications |
| 第 15 週 | Advanced semiconductor devices (FinFET, GAA) |
| 第 16 週 | Final exam |
1. S.M.Sze, Physics of Semiconductor Devices, 4th Edition, 2021. 2. Evstigneev, Mykhaylo. Introduction to semiconductor physics and devices. Springer, 2022. 3. D. Neamen, Semiconductor Physics and Devices, 4th edition (2012).
- 地點
- MIRC R601
- 時間
- M 2-3 pm
- 聯絡方式
- Email: phwang@nycu.edu.tw