記憶體積體電路導論
Introduction to Memory Integrated Circuits
學期
114-1
學分
3
學分
當期課號
515220
永久課號
EEDM20017
開課單位
半導體工程學系
授課教師
張文岳
校區
光復
類別
選修
上課時間表
| 節 | 週一 |
|---|---|
5 13:20–14:10 | 記憶體積體電路導論 EDB06 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
概述
課程內容: 本課程將幫助您理解半導體記憶體技術,它是現代電子系統的關鍵組件。課程將涵蓋各種揮發性和非揮發性記憶體的基本工作原理、架構和特性。學生將學習記憶體單元的設計、製造流程、讀/寫機制、性能指標以及新興的記憶體技術。本課程將幫助學生掌握理解和分析電腦、嵌入式系統和其他數位設備中記憶體子系統所需的知識。 課程目標: 1. 解釋不同類型半導體記憶體的基本工作原理。 2. 描述各種記憶體設備的架構和組織結構,包括SRAM、DRAM、ROM、PROM、EPROM、EEPROM和快閃記憶體。 3. 分析不同儲存單元和陣列的讀寫操作。 4. 評估半導體記憶體的關鍵效能指標,例如存取時間、週期時間、功耗和密度。 5. 了解製造流程對記憶體設備特性的影響。 6. 討論半導體記憶體技術擴展的挑戰和機會。 7. 識別並比較不同記憶體類型在特定應用中的優缺點。
先修科目
半導體元件物理、積體電路導論、電子學、電路學。
教學方式
上課講義及其相關性的教材將會提供。
評分方式
個人報告 30%,期中/期末考各占30%、40%。
週次計畫
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction to Semiconductor Memory • Overview of memory hierarchy and its importance in electronic systems. • Classification of memory technologies: volatile vs. non-volatile, read-only vs. read-write. • Key terminology and performance metrics: capacity, access time, cycle time, bandwidth, power consumption, density, cost. • Historical overview of semiconductor memory development. |
| 第 2 週 | Static Random-Access Memory (SRAM) • SRAM cell structures: basic 6T cell, loadless cells. • Read and write operations in SRAM cells. • SRAM array architecture: row and column decoders, sense amplifiers. • Timing considerations and power dissipation in SRAM. • Applications of SRAM. |
| 第 3 週 | Dynamic Random-Access Memory (DRAM) • DRAM cell structure: 1T-1C cell. • Charge storage and refresh mechanisms. • Read and write operations in DRAM cells. • DRAM array architecture and organization. • Types of DRAM: synchronous DRAM (SDRAM), double data rate (DDR) SDRAM. |
| 第 4 週 | DRAM Subsystems and Performance • Memory controllers and their functions. • DRAM timing parameters and specifications. • Memory interleaving and other techniques for performance enhancement. • Power management in DRAM systems. • Applications of DRAM. |
| 第 5 週 | Read-Only Memory (ROM) • Masked ROM: fabrication and applications. • Programmable ROM (PROM): structure and programming mechanisms. • Erasable PROM (EPROM): UV erasure and programming. • Electrically Erasable PROM (EEPROM): cell structure and operation. • Applications of ROM, PROM, EPROM, and EEPROM. |
| 第 6 週 | Flash Memory - Fundamentals • Introduction to Flash memory: NOR and NAND types. • Floating gate transistor structure and operation. • Programming, erase, and read mechanisms in Flash memory. • Charge trapping and reliability issues. |
| 第 7 週 | Flash Memory - Architectures and Characteristics • NOR Flash architecture and applications. • NAND Flash architecture and applications. • Block management and wear leveling. • Performance characteristics: read/write speeds, endurance. • Error correction codes (ECC) in Flash memory. |
| 第 8 週 | Midterm Exam • Covers material from Weeks 1-7. |
| 第 9 週 | Non-Volatile Memory Technologies - Emerging Trends • Phase-Change Memory (PCM or PCRAM): principles of operation and characteristics. • Resistive Random-Access Memory (ReRAM or RRAM): principles of operation and characteristics. • Magnetoresistive Random-Access Memory (MRAM or STT-MRAM): principles of operation and characteristics. • Ferroelectric RAM (FeRAM or FRAM): principles of operation and characteristics. |
| 第 10 週 | Memory Hierarchy and System Integration • Cache memory: principles, organization, and management. • Interaction between different levels of the memory hierarchy. • Memory interfacing and standards. • Memory testing and reliability considerations. |
| 第 11 週 | Memory Scaling and Future Challenges • Challenges in scaling CMOS-based memory technologies. • Leakage currents, power dissipation, and reliability issues at nanoscale dimensions. • High-k dielectrics and other material innovations. • 3D memory architectures and their potential. |
| 第 12 週 | Memory Applications in Modern Systems • Memory in personal computers and servers. • Memory in mobile devices and embedded systems. • Memory in data centers and cloud computing. • Memory for artificial intelligence and machine learning applications. |
| 第 13 週 | Embedded Memory • Embedded Volatile Memory • Embedded OTP (One Time Programming) Memory • Embedded Non-volatile Memory |
| 第 14 週 | Special Topics • Memory security and data integrity. • Low-power memory design techniques. • Advanced memory testing and characterization. |
| 第 15 週 | Advanced Topics and Trends • Neuromorphic memory • In-memory computing • AI and edge-computing memory challenges |
| 第 16 週 | Final Exam • Covers material from Weeks 9-15. |
教科書
自編講義。
Office Hours
- 聯絡方式
- 力積電 張文岳博士