高功率半導體元件物理
Power Semiconductor Device Physics
學期
114-1
學分
3
學分
當期課號
535205
永久課號
EEIE30078
開課單位
電子研究所
授課教師
崔秉鉞
校區
光復
類別
選修
上課時間表
| 節 | 週二 | 週四 |
|---|---|---|
2 09:00–09:50 | 高功率半導體元件物理 ED103 | |
7 15:30–16:20 | 高功率半導體元件物理 ED103 2 節連堂 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
概述
介紹Si以及SiC高功率半導體元件的工作原理,讓已有半導體元件物理基礎的學生,進一步了解高功率半導體元件的結構、工作原理、設計原則。
先修科目
半導體元件物理或類似內容之課程至少一學期。
教學方式
投影片講解
評分方式
期中考25%、期中報告25%、期末考25%、期末報告25%
課程大綱
- Introduction to SiC, Power System, and Power Devices
- Semiconductor properties related to high power applications
- Breakdown Voltage
- Power Rectifier
- Power MOSFETs
- Power Bipolar Junction Transistors
- Insulated Gate Bipolar Transistor (IGBT)
週次計畫
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction to SiC, Power System, and Power Devices Semiconductor properties related to high power applications |
| 第 2 週 | Semiconductor properties related to high power applications |
| 第 3 週 | Semiconductor properties related to high power applications Breakdown Voltage- Avalanche breakdown, edge termination, RESURF, Super junction, etc. |
| 第 4 週 | Breakdown Voltage- Avalanche breakdown, edge termination, RESURF, Super junction, etc. |
| 第 5 週 | Breakdown Voltage- Avalanche breakdown, edge termination, RESURF, Super junction, etc. |
| 第 6 週 | Rectifier - PiN & SBD |
| 第 7 週 | Power Rectifier - PiN & SBD |
| 第 8 週 | Power Rectifier - PiN & SBD |
| 第 9 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 10 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 11 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 12 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 13 週 | Power MOSFET- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 14 週 | Power Bipolar Junction Transistors- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 15 週 | Power Bipolar Junction Transistors- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. Insulated Gate Bipolar Transistor (IGBT)- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
| 第 16 週 | Insulated Gate Bipolar Transistor (IGBT)- Static blocking, Forward conduction, Dynamic switching, Device Structure, etc. |
教科書
"Fundamentals of Power Semiconductor Devices" by B. Jayant Baliga, Springer, 2008.
Office Hours
- 地點
- 另行約定。
- 時間
- 另行約定。
- 聯絡方式
- E-mail: bytsui@nycu.edu.tw Tel: 03-5131570