低維系統中的電子傳輸及記憶概念
Electron transport in low-dimensional systems and memories concepts
| 節 | 週五 |
|---|---|
2 09:00–09:50 | 低維系統中的電子傳輸及記憶概念 EE116 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
The course corresponds to the fundamental physics from macro- to nano-scale electronic devices, its resistive/conductive properties. In particular, the nature of the different memory concepts will be considered. The memory switching properties, which are based on the electric and magnetic impact, are coming from the application of ferroelectric and magnetic materials (e.g. FeRAM, ReRAM and MRAM), respectively. The operation principals of the different magnetic spin-based as well as semiconductors electronic devices will be also considered (e.g. magnetic domain wall in nanowire, nanoscale vacuum FET, etc). The seminars and homework will include some elements of a structure's modeling and programming using high-level languages such as Wolfram Mathematica and Matlab.
Course oriented to master and Phd students, undergraduate students who are close to graduation with a basic knowledge of mathematics solid state physics. This course will be also oriented for introduction how make hand-made codes for device simulation.
1. Exams and Quizzes: 30% 2. Homework: 30%. (some simple Matlab-based codes, short presentations) 3. Participation 40%. 4. Bonus 10% (personal activity – solution of the advanced level problems)
| 週次 | 主題 |
|---|---|
| 第 1 週 | Basics for electronic devices: introduction into Quantum Mechanics and Solid State physics. |
| 第 2 週 | Electron transport in nano-scale structures: lecture and seminar; Simulation of electron transport (part 1). |
| 第 3 週 | Tunneling phenomena. Interfaces. Lecture and seminar (part 2). Examples: Nano-scale vacuum channel FET, magnetic tunnel junctions, domain walls, etc. |
| 第 4 週 | Properties of the low dimensional systems. Important length scale. Characterization of heterostructures. Barriers and Interfaces. |
| 第 5 週 | MRAM. Spintronic devices. Non-volatile memory. Electron transport in magnetic tunnel junctions (MTJ). Vortex magnetic states in MTJ. STT-MRAM. |
| 第 6 週 | FeRAM and related ferroelectric devices. Basics for Ferroelectric devices. A ferroelectric semiconductor field-effect transistor, and tunnel juction. Screening effect. Hysteresis. |
| 第 7 週 | FeRAM. E-field control of the resistance. AFM technique, PFM spectroscopy for FeRAM. Seminar/practice: simulation of I-V curves of a complicated nanodevices. |
| 第 8 週 | ReRAM. Regime of consecutive and coherent conductivity. Seminar/practice: simulation of I-V curves of a complicated nanodevices. |
| 第 9 週 | Review of homework. Middle term exam (quiz). |
| 第 10 週 | Neuromorphic computation. Role of magnetic domain wall and ferroelectric states in memristors. AI chips. Appendix: Deep Learning in MATLAB. |
| 第 11 週 | Point-like contact model and related spectroscopy. Simulation of memory device properties, such as I-V curves. |
| 第 12 週 | Single electron devices and quantum dots. Quantum wells. Double barrier model of nanoparticles inside MTJ. |
| 第 13 週 | Interface of two materials. Contact potential difference. Surface potential. Contact resistance. |
| 第 14 週 | Skyrmion-based memory concept. Skyrmionics. Basic concepts and physics. |
| 第 15 週 | DRAM cell. Review of the previous topics. Summary. Homework review. |
| 第 16 週 | Final review of student's homework. Final Exam. |
(1) Victor E. Borisenko and Stefano Ossicini. What is What in the Nanoworld, A Handbook on Nanoscience and Nanotechnology (Wiley-VCH Verlag & Co. KGaA, 2012) ePDF ISBN: 978-3-527-64839-9 (2) E. Kasper, D.J. Paul, Silicon Quantum Integrated Circuits , Silicon–Germanium Heterostructure Devices: Basics and Realisations, Springer-Verlag Berlin Heidelberg, -2005, -362p. Other: (*) Useinov A., Lai C.-H., et al. (2018) "Spin and Charge Tunneling Transport in Magnetic Tunnel Junctions With Embedded Nanoparticles" in E. Rentchler, N. Dormacheva et, M. Caporali "Novel Magnetic Nanostructures", Elsevier (2018) https://doi.org/10.1016/B978-0-12-813594-5.00011-4 (*) Yu. G. Naidyuk, I.K. Yanson, "Point-Contact Spectroscopy" Springer Science (2005), ISBN 978-1-4757-6205-1, DOI 10.1007/978-1-4757-6205-1
- 地點
- EE116
- 時間
- F234