光學微影技術
Photolithography
| 節 | 週四 |
|---|---|
2 09:00–09:50 | 光學微影技術 A215 2 節連堂 |
3 10:10–11:00 |
* 根據陽明交大上課時間表所列
1. The fundamental principles of photolithography includes optical theory, photoresist, process developments, and exposure machines & tracks. 2. The fundamental theory of optical imaging for the applications of photolithography. 3. Optical imaging performances corelated to Line Width Roughness and Local CD uniformity for process controls. 4. Introduction of photoresists for DUV and EUV lithography. 5. Understand the key stages in photo lithography process flow and identify process control methodologies. 6. Lens aberrations impact on imaging performances and process controls. 7. EUV lithography and future.
N/A
Face-to-face teaching with in the class materials’ PowerPoint slides.
Attendance 20%、Homework 20%、Final Exam 60%
| 週次 | 主題 |
|---|---|
| 第 1 週 | Overview of photolithography: optical theory & imaging, photoresist, process developments, exposure machines & tracks |
| 第 2 週 | |
| 第 3 週 | 1. The theory of line width roughness and local CD uniformity for process controls 2. Explore EUV lithography |
| 第 4 週 | |
| 第 5 週 | Introduction of photoresists for DUV and EUV lithography |
| 第 6 週 | |
| 第 7 週 | Lithography process tuning and controls |
| 第 8 週 | |
| 第 9 週 | Overlay control methodology. |
| 第 10 週 | |
| 第 11 週 | Lens aberrations impact on imaging performances |
| 第 12 週 | |
| 第 13 週 | visiting ASML and photolithography technology roadmap & exploration |
| 第 14 週 | |
| 第 15 週 | Final Exam |
| 第 16 週 |
N/A
- 時間
- Directly email to lecturer.
- 聯絡方式
- ck.chen@asml.com