奈米結構半導體的理論與模擬
Theory and Modeling of Semiconductor Nanostructures
| 節 | 週三 |
|---|---|
7 15:30–16:20 | 奈米結構半導體的理論與模擬 ED303 3 節連堂 |
8 16:30–17:20 | |
9 17:30–18:20 |
* 根據陽明交大上課時間表所列
We are facing a big challenge in nanometer scale electronics. 1) Electron devices technologies are changing from FIN-FETs to NS-FETs. Hence, quantum mechanical effects are getting more notable in device physics, thanks to structural change as well as dimensional change. 2) The current basement of electronics is the drift-diffusion model that has been formulated assuming the PN junctions. Until when can we believe the drift-diffusion model? 3) New materials to be adopted in advanced transistors requires us to have more basic knowledge of material science. 4) Can Moore's law be continued? We discuss those topics to compare them with the current technologies with sufficient reviews.
A good knowledge of the following subject is required in order to do well in the course. - introductory physics - introductory electronics - introductory VLSI technologies - introductory electron devices technologies
The lectures will be given in blackboard writing and power point presentation. All reports and questions should be made in English.
學期作業: Lecture, 5 Home Works, Mid-Term Event, Final Report 考試 & 評量(比重%) : Home Work (50%) Mid-Term Event (20%) Final Report (30%)
| 週次 | 主題 |
|---|---|
| 第 1 週 | guidance |
| 第 2 週 | quantum mechanics and scaling |
| 第 3 週 | drift-diffusion model and PN junction -1 |
| 第 4 週 | drift-diffusion model and PN junction -2 |
| 第 5 週 | Device Scaling Rule - 1 |
| 第 6 週 | Device Scaling Rule - 2 |
| 第 7 週 | Device Scaling Rule - 3 |
| 第 8 週 | Device Scaling Rule - 4 |
| 第 9 週 | Invited Lecture for Mid-term event |
| 第 10 週 | Gate Stack - 1 |
| 第 11 週 | Gate Stack - 2 |
| 第 12 週 | Gate Stack - 3 |
| 第 13 週 | Beyond Device Scaling - 1 |
| 第 14 週 | Beyond Device Scaling - 2 |
| 第 15 週 | Memory Technology - 1 |
| 第 16 週 | Memory Technology - 2 |
Reference books： [1] A. S. Grove, “Physics and technology of semiconductor devices”, John Wiley & Sons, 1967. [2] S. Sze, "Physics of Semiconductor Devices" [3] H. Watanabe, "Quantum confinement and two-dimensional electron gases in silicon nanosheet channels," in IEEE Electron Devices Reviews; https://ieeexplore.ieee.org/document/11303076 [4] H. Watanabe, “A theoretical study on characteristic wavelength of silicon conduction electrons”, AIP Advances 1 May 2025; 15 (5): 055239. etc.
- 地點
- MIRC 814 電子與資訊研究中心 814
- 時間
- By email appointment
- 聯絡方式
- hwhpnabe@nycu.edu.tw