記憶體積體電路
Memory Circuit Design
| 節 | 週一 |
|---|---|
A 18:30–19:20 | 記憶體積體電路 ED220 3 節連堂 |
B 19:30–20:20 | |
C 20:30–21:20 |
* 根據陽明交大上課時間表所列
(Chinese) 本課程旨在透過「專題導向學習(PBL)」結合「業界標準設計流程」,解決記憶體積體電路課程中理論與實務脫節之痛點。教學目標聚焦於三層次之能力養成:首先在實務技能層面,學生須運用專業EDA工具,獨立完成從SRAM單元、感測放大器至1k-bit記憶體陣列的完整設計,涵蓋電路圖、佈局(Layout)及後模擬(Post-Sim),並掌握靜態雜訊邊際(SNM)與製程變異分析。其次在工程思維層面,培養學生具備PPA(效能、功耗、面積)之設計權衡(Trade-off)能力,從被動操作轉為主動邏輯除錯。最終目標為提升就業競爭力,協助學生產出符合產業規範的晶片設計作品集,有效縮短學用落差。 (English) This course aims to bridge the gap between theory and practice in Memory IC education by combining Project-Based Learning (PBL) with industry-standard design flows. The instructional objectives focus on cultivating competencies across three levels: a. Practical Skills: Students will use professional EDA tools to independently complete a full design cycle—from SRAM cells and sense amplifiers to a 1k-bit memory array. This includes schematics, layout, and post-layout simulation, as well as mastering Static Noise Margin (SNM) and process variation analysis. b. Engineering Mindset: The course fosters the ability to navigate PPA (Performance, Power, Area) design trade-offs, transitioning students from passive tool users to active logical debuggers. c. Employability: The final objective is to help students generate a chip design portfolio that meets industry standards, effectively closing the gap between academic learning and industrial application.
(Chinese) 電子學1,2 電路學1,2 固態電子學 (或 半導體元件物理) ------------------------------------- (English) Electronics 1, 2 Circuit Theory 1, 2 Solid-State Electronics (or Semiconductor Device Physics)
(Chinese) 本課程旨在解決記憶體設計課程中理論與實務脫節之問題。課程以「設計1k-bit SRAM IP」**為驅動主軸,引導學生遵循業界標準設計流程,從Schematic電路構思、Layout佈局繪製,推進至Post-Sim後模擬驗證。 教學過程中強調「做中學」與「設計權衡(Trade-off)」,要求學生利用HSPICE等EDA工具,針對速度、功耗與面積(PPA)進行優化分析。評量機制則突破傳統紙筆測驗,導入「多元評量」,包含除錯日誌、階段性實作檢核與期末效能競賽,藉此評估學生的問題解決邏輯與系統整合能力,並透過行動研究法之循環持續修正教學策略,以培育具備實戰力的IC設計人才。 (English) This course addresses the gap between theory and practice in memory design education. Centered around the project of designing a 1k-bit SRAM IP, the curriculum guides students through an industry-standard design flow—advancing from schematic conception and layout implementation to post-layout simulation (Post-Sim) verification. The instructional approach emphasizes 'learning by doing' and design trade-offs, requiring students to utilize EDA tools (such as HSPICE) to optimize for speed, power, and area (PPA). Moving beyond traditional written exams, the course adopts a multidimensional assessment strategy—including debugging logs, milestone implementation checks, and a final performance competition—to evaluate problem-solving logic and system integration capabilities. Furthermore, the course employs an action research cycle to continuously refine teaching strategies, ensuring the cultivation of industry-ready IC design talent.
(Chinese) 每周Homework佔30%,檢核除錯歷程;期中報告佔30%;期末專題佔40%,要求完成SRAM佈局與後模擬。評分導入業界PPA指標(效能、功耗、面積),透過競賽確保學生具備系統整合之實務能力。 (English) Grading Policy: Weekly Homework (30%): Focuses on verifying the debugging process and workflow. Midterm Report (30%). Final Project (40%): Requires the completion of SRAM layout and post-layout simulation. Note: Grading incorporates industry-standard PPA (Performance, Power, Area) metrics. A design competition format is used to ensure students possess practical skills in system integration.
| 週次 | 主題 |
|---|---|
| 第 1 週 | (導論) 記憶體階層、SRAM/DRAM/Flash 概論、EDA 環境建置 (實作) Linux 環境與 EDA 工具操作教學 |
| 第 2 週 | (CMOS 製程與元件) MOSFET 模型、製程變異 (Process Corners) (實作) Lab 1: Inverter Layout & Post-Sim |
| 第 3 週 | (SRAM 單元設計 (1)) 6T-SRAM 工作原理、讀寫操作波形分析 (實作) Lab 1: Inverter Layout & Post-Sim |
| 第 4 週 | (SRAM 單元設計 (2)) 穩定度分析:SNM 計算與模擬 (Butterfly Curve) (實作) Lab 3: SNM Simulation (Read/Write/Hold) |
| 第 5 週 | (記憶體陣列) Row/Column 架構、位元線 (Bit-line) 寄生電容估算 (實作) HW 1: 4x4 Small Array Simulation |
| 第 6 週 | (HW 1: 4x4 Small Array Simulation) Stick Diagram、SRAM Cell Layout 規範、DRC/LVS (實作) Lab 4: 6T-SRAM Standard Cell Layout |
| 第 7 週 | (感測放大器 (Sense Amp)) Voltage Mode vs. Current Mode SA、Offset 問題 (實作) Lab 5: Sense Amplifier Design & Tuning |
| 第 8 週 | (期中評量) 以SRAM為主題分組報告 (3人為一組) (實作) 分組報告與同儕互評 (Peer Review) |
| 第 9 週 | (解碼器設計 (Decoder)) Row Decoder, Pre-decoder 邏輯設計與延遲最佳化。 (實作) Lab 6: Decoder Logic Effort Calculation |
| 第 10 週 | (時序控制 (Timing)) Self-timed loop, Pulse Generator (實作) Lab 7: Generating Internal Clock Signals |
| 第 11 週 | (寫入驅動電路) Write Driver & Pre-charge Circuit (實作) Lab 8: Write Margin Verification |
| 第 12 週 | (佈局設計技巧 (2)) Array Layout 拼接、Power Ring/Stripe 規劃 (實作) Lab 9: Array Layout Integration |
| 第 13 週 | (專題實作週 (1)) 系統整合:將各模組組合成完整記憶體 IP (實作) 課堂實作指導 (Debug Session) |
| 第 14 週 | (專題實作週 (2)) 後模擬 (Post-Layout Simulation) 與效能驗證 (實作) 解決 LVS 錯誤與寄生參數萃取 |
| 第 15 週 | (專題實作週 (3)) PVT Corner Analysis (SS/TT/FF, Temp, Voltage) (實作) 驗證電路在最差情況下的功能 |
| 第 16 週 | (期末成果發表) Final Demo & Performance Competition (實作) 分組展示、PPA (Power/Perf/Area) 競賽 |
(Chinese) 無。由授課教授自行編纂。 (English) None. Materials are compiled by the instructor.
- 地點
- 國立陽明交通大學光復校區工程四館。 Engineering Building 4, Guangfu Campus, National Yang Ming Chiao Tung University in Hsinchu City, Taiwan.
- 時間
- 請自行寄信給任課教授約時間。 (Please email the instructor to schedule an appointment.)
- 聯絡方式
- 謝易叡 副教授: erayhsieh@nycu.edu.tw