量子物理與元件

近十年來，隨著半導體製程技術的精進，單位面積所含電晶體的數量依照摩爾經驗定律持續增加。然根據量子理論，在現有之電晶體與運算架構下，透過縮小矽電晶體幾何面積來增加位元數與運算效能的方法將不無適用。因此，對於非矽材料平台與新的電晶體元件架構的相關研究更是如火如荼的進行中。隨著半導體元件尺度的微縮，奈米電子乃至於量子電子學的概念愈顯得重要。本課程將著重於探討低微度半導體元件之設計與其中電荷與自旋傳輸之量子物理機制並對其進行控制，以期能將其運用於次世代電晶體元件的開發。 在課程後半部將會由本系講座教授蔡兆申博士(蔡教授亦為我們的中研院院士)。蔡教授在超導量子電路與電腦有卓越的研究成果(https://udn.com/news/story/6928/9192717)，非常榮幸能邀請到蔡教授為我們開授相關課程。在本課程中，蔡教授將深入淺出，從超導體特性、元件到電路一氣呵成，使同學們能全面性瞭解2025年諾貝爾物理獎的研究與時下最熱門的量子電腦議題。 本課程亦歡迎具備先備能力的大學部同學選修。 This course explores nanoelectronics and quantum electronics in low-dimensional semiconductor and superconductor devices, focusing on the underlying principles of quantum transport. Harnessing quantum properties is considered key to advancing current semiconductor technologies for information processing. Thanks to breakthroughs in semiconductor fabrication techniques, semiconductor and superconductor quantum devices are now becoming a reality. Additionally, this course will cover the role of quantum physics in semiconductor-based quantum computation, with a particular emphasis on electron charge and spin manipulation, as well as superconducting circuits and superconductor-based quantum computation.

General Physics, Modern Physics, and Semiconductor Physics and Devices

助教: Pei-Tzu Wu 吳珮慈 SC006 peytsyr42010@gmail.com

Fianl report 40% Final exam 60%

Lectures notes Chapter 1 Introduction 1.1 Reasons for the end of planar metal-oxide –semiconductor field-effect transistors (MOSFETs) #Quick review on the essential semiconductor physics and fabrication techniques for Si MOSFETs #Current-voltage characteristics in transistor and memory devices 1.2 Two-dimensional electron systems from semiconductors #device fabrication and structure: chapter 6 in Text [1] #quantum wells from heterostructures: chapter 5 in Text [1]; chapter 4 in Text [3] ------------------------------------------------------------------------------------------- Chapter 2 Semiclassical electron dynamics in two-dimensional systems 2.1 density of states/carrier density/Drude model: chapter 10 in Text [1]; chapter 5 in Text [2] 2.2 Drift current and Hall effect: chapter 10 in Text [1]; chapter 21 in Text [2] ------------------------------------------------------------------------------------------- Chapter 3 Coherent charge transport in one-dimensional systems 3.1 Quantization in quantum point contacts: #Devices and conductance quantization: chapter 11 in Text [1]; chapters 16 and 17.2 in Text [2] 3.2 Integer and fractional Quantum Hall effect: #1D channels in a strong magnetic constraint: chapters 16.2 and 16.3 in Text [1]; chapters 25.8 to 25.11 in Text [2] #Composite fermions: chapter 16.4 in Text [1]; chapter 25.11 in Text [2] 3.3 Revisiting ballistic and diffusive charge transport in nanoscale conductors from the perspective of point-contact and quantized channels #Resistance and energy dissipation: chapter 11.2 in Text [1] #Generalized Ohm's law/conductivity from the viewpoint of 1D ballistic channels in three-, two-, and one-dimensional FETs: chapters 1-4 and chapters 6-9 in Text [4] #Quasi-Fermi energy: chapters 8 and 10 in Text [4] #Landauer-Buttiker formalism: chapter 13 in Text [1]; chapter 10 in Text [4]; ------------------------------------------------------------------------------------------- Chapter 4 Quantum dot physics: chapter 13 in Text [1] 4.1 Quantum dot devices and single-electron transistors: Refs. [1-4] 4.2 Coulomb blockade with electrons and spins: Refs. [1-4] 4.3 Spin-related phenomena: spin blockade; spin-1/2 and spin-1 Kondo effect; RKKY interaction ------------------------------------------------------------------------------------------- Chapter 5 Spin and quantum measurements 5.1 Theory from experiments: chapters 1-3 in Text [3] 5.2 Devices: Refs. [5-17] 5.3 Quantum logic gates: chapter 16 in Text [3]; chapter 22.4 in Text [1] ------------------------------------------------------------------------------------------- Chapter 6 Superconductivity physics and devices 6.1 Fundamental superconductivity properties 6.2 Superconducting devices 6.3 Superconducting circuits ------------------------------------------------------------------------------------------- Text books cited as Text [1], Text [2], and so on [1] Semiconductor nanostructures quantum states and electronic transport Thomas Ihn (Oxford University Press, 2010) (Resource from NYCU library website; 陽明交大圖書館電子資源) [2] Quantum Physics of Semiconductor Materials and Devices Debdeep Jena (Oxford University Press, 2022) (Resource from NYCU library website; 陽明交大圖書館電子資源) [3] Quantum Mechanics D. McIntyre, C. A Manogue, and J. Tate (Pearson, 2014) 滄海圖書代理 [4] Lessons from Nanoelectronics: A New Perspective on Transport - Part A: Basic Concepts/Part B: Quantum Transport Supriyo Datta (World Scientific Publishing Company, 2018) (Resource from NYCU library website and author's nanoHUB; 陽明交大圖書館電子資源與教科書作者提供之線上電子資源nanoHUB) [5] Introduction to Solid State Physics (Eighth Edition) Charles Kittel (Wiley, 2005) for superconductivity and superconducting devices References cited as Ref. [1], Ref. [2], and so on Journal papers Charges and spins in quantum dots [1] M. A. Kastner, The single-electron transistor, Rev. Mod. Phys. 64, 849 (1992). [2] L. P. Kouwenhoven et al., Few-electron quantum dots, Rep. Prog. Phys. 64, 701 (2001). [3] W. G. van der Wiel et al., Electron transport through double quantum dots, Rev. Mod. Phys. 75, 1–22 (2003). [4] R. Hanson et al., Spins in few-electron quantum dots, Rev. Mod. Phys. 79, 1217–1266 (2007). Charge and spin readout [5] M. Field et al., Measurements of coulomb blockade with a noninvasive voltage probe, Phys. Rev. Lett. 70, 1311 (1993). [6] J. M. Elzerman et al., Few-electron quantum dot circuit with integrated charge read out, Phys. Rev. B 67, 161308(R) (2003). [7] J. M. Elzerman et al., Single-shot read-out of an individual electron spin in a quantum dot, Nature (London) 430, 431 (2004). Electron spin resonance (ESR) [8] F. H. L. Koppens et al., Driven coherent oscillations of a single electron spin in a quantum dot, Nature (London) 442, 766 (2006). [9] J. J. Pla et al., A single-atom electron spin qubit in silicon, Nature (London) 489, 541 (2012). [10] M. Pioro-Ladrière et al., Electrically driven single-electron spin resonance in a slanting Zeeman field, Nat. Phys. 4, 776 (2008). Electric-dipole spin resonance (EDSR) [11] S. Nadj-Perge et al., Spin–orbit qubit in a semiconductor nanowire, Nature (London) 468, 1084 (2010). [12] J. R. Petta et al., Coherent manipulation of coupled electron spins in semiconductor, Science 309, 2180 (2005). [13] K. C. Nowack, F. H. L. Koppens, Y. V. Nazarov, and L. M. K. Vandersypen, Coherent Control of a Single Electron Spin with Electric Fields, Science 318, 1430 (2007). Phosphorous atoms [14] A. Morello et al., Single-shot readout of an electron spin in silicon, Nature (London) 467, 687 (2010). [15] J. J. Pla et al., A single-atom electron spin qubit in silicon, Nature (London) 489, 541 (2012). Charge qubit [16] J. Gorman et al., Charge-qubit operation of an isolated double quantum dot, Phys. Rev. Lett. 95, 090502 (2005). Flying qubit [17] M. Yamamoto et al., Electrical control of a solid-state flying qubit, Nat. Nanotechnol. 7, 247–251 (2012).

聯絡方式

stlo@nycu.edu.tw