半導體物理及元件（一）
Semiconductor Physics and Devices (I)
學期
115-1
學分
3
學分
當期課號
536615
永久課號
SCEP30010
開課單位
電子物理學系
授課教師
陳振芳
類別
選修
上課時間表
| 節 | 週三 |
|---|---|
5 13:20–14:10 | 半導體物理及元件（一） KB402 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
教學方式
Lecture in class and recorded video later on E3
評分方式
mid-term 50% and final 50%
週次計畫
| 週次 | 主題 |
|---|---|
| 第 1 週 | Chapter 1 Basic concept of solid and energy band 1.1 Schrodinger’s wave equation 1.2 A particle in free space 1.3 Penetration depth for a free electron hitting a potential well |
| 第 2 週 | 1.4 Energy band 1.5 Density of stages in 1-D, 2-D and 3-D systems 1.6 Valence electrons and free electrons 1.7 Fermi-Dirac distribution |
| 第 3 週 | 1.8 The concept of Fermi level 1.9 The donor and acceptor impurities 1.10 The drift and diffusion currents 1.11 The Hall Effect 1.12 Einstein relationship |
| 第 4 週 | Chapter 2 P-N junction diode 2.1 The electron-hole recombination model 2.2 Build-in electric field 2.3 Depletion width derivation |
| 第 5 週 | 2.4 Potential barrier derivation 2.5 The energy band of the pn junction under thermal equilibrium 2.6 The equilibrium boundary condition 2.7 Quasi Fermi-levels splitting by applied bias |
| 第 6 週 | 2.8 The recombination current in the depletion region 2.9 The forward-bias recombination current on both sides 2.10 The reverse-bias generation current in p-n junction diode |
| 第 7 週 | 2.11 The capacitance characterizations of dopant concentration and barrier height 2.12 The ac model of p-n junction under reverse bias 2.13 Derivation of the diffusion capacitance 2.14 The ac model of p-n junction under forward bias |
| 第 8 週 | 2.15 Charge accumulation and frequency-dependent capacitance bucket model 2.16 Capacitance short-circuit effect on the p-n junction light emission 2.17 Frequency-dependent circuit model for electron-hole recombination 2.18 Serial resistance or parallel resistance (capacitance) to represent the voltage or current failing to enter the device |
| 第 9 週 | Chapter 3 Shockley-Read-Hall theory on defect traps 3.1 Various defects in semiconductor 3.2 Electron, hole traps, generation and recombination defect centers 3.3 Derivation of Shockley-Read-Hall theory |
| 第 10 週 | 3.4 Trap dynamics and the time constant of the trap transient 3.5 Steady-state distribution function of traps 3.6 Minority-carrier trap-assisted recombination rate 3.7 Minority-carrier trap-assisted relaxation time |
| 第 11 週 | 3.8 Minority injection current in a region with near-mid-gap recombination centers 3.9 Relation time constant in a region with near-mid-gap recombination centers 3.10 Trap-assisted generation current in the depletion region of a p-n junction |
| 第 12 週 | 3.11 Trap-assisted recombination in the depletion region of a p-n junction 3.12 Characterizations of the emission time and activation energy of electron traps 3.13 Deep-level transient spectroscopy on electron traps |
| 第 13 週 | Chapter 4 Bipolar junction transistor 4.1 The energy band of the bipolar junction transistor 4.2 The boundary conditions of the active operation mode 4.3 The diagram for low-frequency current components in BJT |
| 第 14 週 | 4.4 Derivation of the low-frequency base transit current, base transport factor 4.5 The low-frequency ac currents 4.6 The DC and ac current gain Beta |
| 第 15 週 | 4.7 The DC biasing and ac amplification of BJT amplifier 4.8 A faucet model for base current triggering 4.9 The main current transport in BJT and the base transit time |
| 第 16 週 | 4.10 The recombination time, transit time and capacitive accumulation time 4.11 Diffusion capacitance comparison between p-n junction and BJT 4.12 High-frequency BJT model and the gain-bandwidth product in CE |
教科書
Semiconductor Physics and Devices by Donald Neamen